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Acta Physica Sinica, Volume. 69, Issue 7, 078501-1(2020)

Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices

Shi-Jian Dong1, Hong-Xia Guo1,2,3、*, Wu-Ying Ma3, Ling Lv4, Xiao-Yu Pan3, Zhi-Feng Lei2, Shao-Zhong Yue1, Rui-Jing Hao1, An-An Ju1, Xiang-Li Zhong1, and Xiao-Ping Ouyang1,3
Author Affiliations
  • 1School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
  • 2State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, CEPREI, Guangzhou 510610, China
  • 3Northwest Institute of Nuclear Technology, Xi’an 710024, China
  • 4Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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    [1] Zhou X Y, Lv Y J, Tan X, Wang Y G, Song X B, He Z Z, Zhang Z R, Liu Q B, Han T T, Fang Y L, Feng Z H[J]. Acta Phys. Sin., 67, 178501(2018).

    [2] Vurgaftman I, Meyer J R, Ram-Mohan L R[J]. J. Appl. Phys., 89, 5815(2001).

    [3] Meneghesso G, Verzellesi G, Rampazzo F, Zanon F, Tazzoli A, Meneghini M, Zanoni E[J]. IEEE Trans. Device Mater. Reliab., 8, 332(2008).

    [4] Gong J M, Wang Q, Yan J D, Liu F Q, Feng C, Wang X L, Wang Z G[J]. Chin. Phys. Lett., 33, 117303(2016).

    [5] Wu H, Duan B X, Yang L Y, Yang Y T[J]. Chin. Phys. B, 28, 027302(2019).

    [6] Zhang L, Lester L F, Baca A G, Shul R J, Chang P C, Willison C G, Mishra U K, Denbaars S P, Zolper J C[J]. IEEE Trans. Electron Devices, 47, 507(2000).

    [7] Jayarman R, Sodini C G[J]. IEEE Trans. Electron Devices, 36, 1773(1989).

    [8] Fleetwood D M, Shaneyfelt M R, Schwank J R[J]. Appl. Phys. Lett., 64, 1965(1994).

    [9] Wang K, Liu Y, Chen H B, Deng W L, En Y F, Zhang P[J]. Acta Phys. Sin., 64, 108501(2015).

    [10] Liu Y, Chen H B, He Y J, Wang X, Yue L, En Y F, Liu M H[J]. Acta Phys. Sin., 64, 078501(2015).

    [11] Sun P, Du L, He L, Chen W H, Liu Y D, Zhao Y[J]. Acta Phys. Sin., 61, 127808(2012).

    [12] Liu Y, Wu W J, Li B, En Y F, Wang L, Liu Y R[J]. Acta Phys. Sin., 63, 098503(2014).

    [13] Fung T C, Baek G, Kanicki J[J]. J. Appl. Phys., 108, 074518(2010).

    [14] Zheng X, Feng S W, Peng C, Lin G, Bai L, Li X, Yang Y, Pan S J, Hu Z X, Li X Y, Zhang Y M[J]. IEEE Trans. Electron Devices, 66, 3784(2019).

    [15] Smith M D, O’Mahony D, Vitobello F, Muschitiello M, Costantino A, Barnes A R, Parbrook P J[J]. Semicond. Sci. Technol., 31, 025008(2016).

    [16] Bhuiyan M A, Zhou H, Chang S J, Lou X B, Gong X, Jiang R, Gong H Q, Zhang E X, Won C H, Lim J W, Lee J H, Gordon R G, Reed R A, Fleetwood D M, Ye P D, Ma T P[J]. IEEE Trans. Nucl. Sci., 65, 46(2017).

    [17] Choi H S, Jeon S, Kim H, Shin J, Kim C, Chung U I[J]. IEEE Electron Device Lett., 32, 1083(2011).

    [18] Rashmi A, Kranti S, Haldar , Gupta R S[J]. Solid State Electron., 46, 621(2002).

    [19] Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y[J]. Acta Phys. Sin., 58, 1161(2009).

    [20] Lü L[J]. Ph.D.Dissertation(2013).

    [21] Hooge F N[J]. IEEE Trans. Electron Devices, 41, 1926(1994).

    [22] Simoen E, Mercha A, Claeys C, Lukyanchikova N[J]. Solid State Electron., 51, 16(2007).

    [23] Jomaah J, Balestra [J]. IEE Proc. Circuits Devices Syst., 151, 111(2004).

    [24] Liu Y, Wu W J, En Y F, Wang L, Lei Z F, Wang X H[J]. IEEE Electron Device Lett., 35, 369(2014).

    [25] Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis C A, Templier F, Kamarinos G[J]. J. Appl. Phys., 108, 106103(2010).

    [26] Ghibaudo G, Roux O, Nguyen-Duc C, Balestra F, Brini J[J]. Phys. Status Solidi A, 124, 571(1991).

    [27] Christensson S, Lundstrom I, Svensson C[J]. Solid State Electron., 11, 797(1968).

    [28] Rahal M, Lee M, Burdett A P[J]. IEEE Trans. Electron Devices, 49, 319(2002).

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    Shi-Jian Dong, Hong-Xia Guo, Wu-Ying Ma, Ling Lv, Xiao-Yu Pan, Zhi-Feng Lei, Shao-Zhong Yue, Rui-Jing Hao, An-An Ju, Xiang-Li Zhong, Xiao-Ping Ouyang. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices[J]. Acta Physica Sinica, 2020, 69(7): 078501-1

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    Paper Information

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    Received: Oct. 12, 2019

    Accepted: --

    Published Online: Nov. 20, 2020

    The Author Email:

    DOI:10.7498/aps.69.20191557

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology