<trans-title xml:lang="en">Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices</trans-title>

Shi-Jian Dong; Hong-Xia Guo; Wu-Ying Ma; Ling Lv; Xiao-Yu Pan; Zhi-Feng Lei; Shao-Zhong Yue; Rui-Jing Hao; An-An Ju; Xiang-Li Zhong; Xiao-Ping Ouyang

doi:10.7498/aps.69.20191557

Acta Physica Sinica, Volume. 69, Issue 7, 078501-1(2020)

Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices

Shi-Jian Dong¹, Hong-Xia Guo^1,2,3、*, Wu-Ying Ma³, Ling Lv⁴, Xiao-Yu Pan³, Zhi-Feng Lei², Shao-Zhong Yue¹, Rui-Jing Hao¹, An-An Ju¹, Xiang-Li Zhong¹, and Xiao-Ping Ouyang^1,3

Author Affiliations

¹School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China

²State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, CEPREI, Guangzhou 510610, China

³Northwest Institute of Nuclear Technology, Xi’an 710024, China

⁴Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

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Fig. 1. AlGaN/GaN HEMT devices’ cross-section.

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Fig. 2. AlGaN/GaN HEMT devices’ low frequency noise measurement system.

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Fig. 3. The output characteristic curve (a) and transfer characteristic curve (b) of the AlGaN/GaN HEMT device before and after irradiation under the zero-bias.

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Fig. 4. Charge distribution patterns of AlGaN/GaN HEMT devices: (a) The off and semi-on states; (b) zero-bias.

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Fig. 5. Normalized channel current noise power spectral density in the AlGaN/GaN HEMT devices before and after irradiation: (a) OFF state; (b) SEMI-ON state; (c) zero-bias.

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Fig. 6. Normalized channel current noise power spectral density versus overdrive voltage in the AlGaN/GaN HEMT devices before and after irradiation: (a) OFF state; (b) SEMI-ON state; (c) zero-bias (dot: measured value; continuous line: fitted value).

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Fig. 7. Normalized channel current noise power spectral density versus channel current in the AlGaN/GaN HEMT devices before and after irradiation: (a) OFF state; (b) SEMI-ON state; (c) zero-bias (f = 25 Hz, dot: measured value; continuous line: fitted value).

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Fig. 8. Extracted spatial distribution of trapped charges in the AlGaN/GaN HEMT devices’ barrier layer: (a) OFF state; (b) SEMI-ON state; (c) zero-bias.

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Table 1. The biases set of AlGaN/GaN HEMT device irradiation experiment.
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Table 1. The biases set of AlGaN/GaN HEMT device irradiation experiment.
V_GS/V V_DS/V
关态(OFF) –3.0 0.5
半开态(SEMI-ON) –1.9 0.5
零偏(zero-bias) 0 0

Table 2.
Variation of saturation drain current and maximum transconductance before and after irradiation in AlGaN/GaNHEMT devices with different biases.
不同偏置下AlGaN/GaN HEMT器件辐照前后饱和漏电流与最高跨导的变化
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Table 2.
Variation of saturation drain current and maximum transconductance before and after irradiation in AlGaN/GaNHEMT devices with different biases.
不同偏置下AlGaN/GaN HEMT器件辐照前后饱和漏电流与最高跨导的变化
关态(OFF) 半开(SEMI-ON) 零偏(zero-bias)
ΔI_DSsat/% –26.00 –31.42 –36.28
Δg_mmax/% –22.86 –34.58 –52.94

Table 3.
Flat-band voltage noise power spectral density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in V²·Hz^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后平带电压噪声功率谱密度(单位: V²·Hz^–1)

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Table 3.
Flat-band voltage noise power spectral density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in V²·Hz^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后平带电压噪声功率谱密度(单位: V²·Hz^–1)

	关态 (OFF)	半开态 (SEMI-ON)	零偏 (zero-bias)
0 rad(Si)	3.20 × 10^–14	2.65 × 10^–14	3.18 × 10^–14
1 Mrad(Si)	4.21 × 10^–14	3.85 × 10^–14	5.16 × 10^–14

Table 4.
The defect density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in cm^–3·eV^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后缺陷密度(单位: cm^–3·eV^–1)

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Table 4.
The defect density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in cm^–3·eV^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后缺陷密度(单位: cm^–3·eV^–1)

	关态 (OFF)	半开态 (SEMI-ON)	零偏 (zero-bias)
0 rad(Si)	4.106 × 10¹⁷	3.400 × 10¹⁷	4.080 × 10¹⁷
1 Mrad(Si)	5.402 × 10¹⁷	4.940 × 10¹⁷	6.621 × 10¹⁷
ΔN_t/%	31.56	45.29	62.28

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Shi-Jian Dong, Hong-Xia Guo, Wu-Ying Ma, Ling Lv, Xiao-Yu Pan, Zhi-Feng Lei, Shao-Zhong Yue, Rui-Jing Hao, An-An Ju, Xiang-Li Zhong, Xiao-Ping Ouyang. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices[J]. Acta Physica Sinica, 2020, 69(7): 078501-1

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Paper Information

Category:

Received: Oct. 12, 2019

Accepted: --

Published Online: Nov. 20, 2020

The Author Email:

DOI:10.7498/aps.69.20191557

Topics

Nuclear physics

Particles and fields

Particle and nuclear astrophysics and cosmology

Table 1. The biases set of AlGaN/GaN HEMT device irradiation experiment.

Table 1. The biases set of AlGaN/GaN HEMT device irradiation experiment.

Table 2. Variation of saturation drain current and maximum transconductance before and after irradiation in AlGaN/GaNHEMT devices with different biases.不同偏置下AlGaN/GaN HEMT器件辐照前后饱和漏电流与最高跨导的变化

Table 2. Variation of saturation drain current and maximum transconductance before and after irradiation in AlGaN/GaNHEMT devices with different biases.不同偏置下AlGaN/GaN HEMT器件辐照前后饱和漏电流与最高跨导的变化

Table 3. Flat-band voltage noise power spectral density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in V2·Hz–1). 不同偏置下AlGaN/GaN HEMT器件辐照前后平带电压噪声功率谱密度(单位: V2·Hz–1)

Table 3. Flat-band voltage noise power spectral density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in V2·Hz–1). 不同偏置下AlGaN/GaN HEMT器件辐照前后平带电压噪声功率谱密度(单位: V2·Hz–1)

Table 4. The defect density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in cm–3·eV–1). 不同偏置下AlGaN/GaN HEMT器件辐照前后缺陷密度(单位: cm–3·eV–1)

Table 4. The defect density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in cm–3·eV–1). 不同偏置下AlGaN/GaN HEMT器件辐照前后缺陷密度(单位: cm–3·eV–1)

Table 2.
Variation of saturation drain current and maximum transconductance before and after irradiation in AlGaN/GaNHEMT devices with different biases.
不同偏置下AlGaN/GaN HEMT器件辐照前后饱和漏电流与最高跨导的变化

Table 2.
Variation of saturation drain current and maximum transconductance before and after irradiation in AlGaN/GaNHEMT devices with different biases.
不同偏置下AlGaN/GaN HEMT器件辐照前后饱和漏电流与最高跨导的变化

Table 3.
Flat-band voltage noise power spectral density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in V²·Hz^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后平带电压噪声功率谱密度(单位: V²·Hz^–1)

Table 3.
Flat-band voltage noise power spectral density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in V²·Hz^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后平带电压噪声功率谱密度(单位: V²·Hz^–1)

Table 4.
The defect density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in cm^–3·eV^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后缺陷密度(单位: cm^–3·eV^–1)

Table 4.
The defect density in the AlGaN/GaN HEMT devices before and after irradiation under different biases (in cm^–3·eV^–1).
不同偏置下AlGaN/GaN HEMT器件辐照前后缺陷密度(单位: cm^–3·eV^–1)