Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches

Biao Yang; Xun Sun; Yangfan Li; Huiru Sha; Jian Jiao; Deqiang Li; Lei Zhang; Chongbiao Luan; Longfei Xiao; Xiufang Chen; Xiangang Xu

doi:10.11884/HPLPB202436.240321

High Power Laser and Particle Beams, Volume. 36, Issue 11, 115005(2024)

Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches

Biao Yang^1,2, Xun Sun^1,2, Yangfan Li^1,2, Huiru Sha^1,2, Jian Jiao^1,2, Deqiang Li^1,2, Lei Zhang^1,2, Chongbiao Luan³, Longfei Xiao^1,2、*, Xiufang Chen^1,2, and Xiangang Xu^1,2

Author Affiliations

¹Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

²State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

³Institute of Fluid Physics, CAEP, Mianyang 621900, China

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References(16)

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[4] Yuan Jianqiang, Li Hongtao, Liu Hongwei. Study on high-power photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 22, 791-794(2010).

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[6] Luan Chongbiao, Li Hongtao. Influence of hot-carriers on the on-state resistance in Si and GaAs photoconductive semiconductor switches working at long pulse width[J]. Chinese Physics Letters, 37, 044203(2020).

[7] Rais-Zadeh M, Gokhale V J, Ansari A et al. Gallium nitride as an electromechanical material[J]. Journal of Microelectromechanical Systems, 23, 1252-1271(2014).

[8] [8] Mauch D, Dickens J, Kuryatkov V, et al. Evaluation of GaN: Fe as a high voltage photoconductive semiconduct switch f pulsed power applications[C]Proceedings of 2015 IEEE Pulsed Power Conference. 2015: 14.

[9] Yang Xianghong, Yang Yingxiang, Hu Long et al. The initial test of a micro-joules trigger, picosecond response, vertical GaN PCSS[J]. IEEE Photonics Technology Letters, 35, 69-72(2023).

[10] Yuan Jianqiang, Liu Hongwei, Liu Jinfeng. GaAs photoconductive semiconductor switch triggered by laser spots with different profiles[J]. High Power Laser and Particle Beams, 22, 557-560(2010).

[11] Wei Jinhong, Li Song, Chen Hong et al. Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity[J]. Plasma Science and Technology, 26, 055502(2024).

[12] Sun Xun, Xiao Longfei, Luan Chongbiao et al. Low ON-resistance and high peak voltage transmission efficiency based on high-purity 4H-SiC photoconductive semiconductor switch[J]. IEEE Transactions on Power Electronics, 39, 2013-2019(2024).

[13] Richter E, Beyer F C, Zimmermann F et al. Growth and properties of intentionally carbon-doped GaN layers[J]. Crystal Research and Technology, 55, 1900129(2020).

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[15] Yang Xianghong, Hu Long, Dang Xin et al. Low specific contact resistivity of 10⁻³Ω·cm² for Ti/Al/Ni/Au multilayer metals on SI-GaN: Fe substrate[J]. IEEE Transactions on Electron Devices, 69, 5773-5779(2022).

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Biao Yang, Xun Sun, Yangfan Li, Huiru Sha, Jian Jiao, Deqiang Li, Lei Zhang, Chongbiao Luan, Longfei Xiao, Xiufang Chen, Xiangang Xu. Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches[J]. High Power Laser and Particle Beams, 2024, 36(11): 115005

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Paper Information

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Received: Sep. 12, 2024

Accepted: Oct. 7, 2024

Published Online: Jan. 8, 2025

The Author Email: Longfei Xiao (xiaolongfei@sdu.edu.cn)

DOI:10.11884/HPLPB202436.240321

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology