High Power Laser and Particle Beams, Volume. 36, Issue 11, 115005(2024)
Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches
Fig. 1. Schematic of GaN PCSS device (Ti/Al/Ni/Au: 20 nm/120 nm/55 nm/45 nm)
Fig. 2. Pulse width of laser (355 nm, 80 ps, 500 Hz) waveform and circuit diagram of the test-setup for evaluation of the on-state performance of the GaN PCSS
Fig. 3. Profile images and energy distribution along the
Fig. 4. Output voltage waveform diagrams, efficiency comparison charts at different laser energy levels under an 800 V charging voltage, and a comparative voltage waveform diagram at 500 μJ laser energy
Fig. 5. Output voltage waveforms and voltage conversion efficiency scatter plot under same laser pulse energy (500 μJ)
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Biao Yang, Xun Sun, Yangfan Li, Huiru Sha, Jian Jiao, Deqiang Li, Lei Zhang, Chongbiao Luan, Longfei Xiao, Xiufang Chen, Xiangang Xu. Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches[J]. High Power Laser and Particle Beams, 2024, 36(11): 115005
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Received: Sep. 12, 2024
Accepted: Oct. 7, 2024
Published Online: Jan. 8, 2025
The Author Email: Longfei Xiao (xiaolongfei@sdu.edu.cn)