High Power Laser and Particle Beams, Volume. 36, Issue 11, 115005(2024)

Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches

Biao Yang1,2, Xun Sun1,2, Yangfan Li1,2, Huiru Sha1,2, Jian Jiao1,2, Deqiang Li1,2, Lei Zhang1,2, Chongbiao Luan3, Longfei Xiao1,2、*, Xiufang Chen1,2, and Xiangang Xu1,2
Author Affiliations
  • 1Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
  • 2State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 3Institute of Fluid Physics, CAEP, Mianyang 621900, China
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    Figures & Tables(5)
    Schematic of GaN PCSS device (Ti/Al/Ni/Au: 20 nm/120 nm/55 nm/45 nm)
    Pulse width of laser (355 nm, 80 ps, 500 Hz) waveform and circuit diagram of the test-setup for evaluation of the on-state performance of the GaN PCSS
    Profile images and energy distribution along the y axis of Gaussian beam, falt-top beam
    Output voltage waveform diagrams, efficiency comparison charts at different laser energy levels under an 800 V charging voltage, and a comparative voltage waveform diagram at 500 μJ laser energy
    Output voltage waveforms and voltage conversion efficiency scatter plot under same laser pulse energy (500 μJ)
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    Biao Yang, Xun Sun, Yangfan Li, Huiru Sha, Jian Jiao, Deqiang Li, Lei Zhang, Chongbiao Luan, Longfei Xiao, Xiufang Chen, Xiangang Xu. Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches[J]. High Power Laser and Particle Beams, 2024, 36(11): 115005

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    Paper Information

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    Received: Sep. 12, 2024

    Accepted: Oct. 7, 2024

    Published Online: Jan. 8, 2025

    The Author Email: Longfei Xiao (xiaolongfei@sdu.edu.cn)

    DOI:10.11884/HPLPB202436.240321

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