High Power Laser and Particle Beams, Volume. 36, Issue 2, 025019(2024)

High speed package-on-package structure designed for SiC-MOSFET and its performance evaluation

Jiuxin Ma, Jianhao Ma, Lüheng Ren, Liang Yu*, Chenguo Yao, and Shoulong Dong
Author Affiliations
  • National Key Laboratory of Power Transmission Equipment Technology, Chongqing University, Chongqing 400044, China
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    Figures & Tables(12)
    Schematic diagram of the interior of the package-on-package (PoP) structure
    Overall overview of the PoP structure
    Spatial variation of magnetic field of laminated package during pulse formation
    Magnetic density vector distribution of the PoP structure in pulse flat top stage
    Current density distribution of the PoP structure in pulse flat top stage
    Schematic diagram of switching characteristic test circuit
    Switch characteristic test experimental circuit
    Comparison of double pulse test waveforms at rated current 36 A between TO-263 and PoP switches
    Comparison of double pulse test waveforms when the pulse current is 90 A between TO-263 and PoP switches
    • Table 1. Experimental parameters for characteristic evaluation

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      Table 1. Experimental parameters for characteristic evaluation

      Csave/μFLsave/μHUg.sta-off/VRg.current/mΩUg.on/VUg.off/VRdampchip of PoP
      575−92015−95CPM3-0065-1000B
    • Table 2. Comparison of TO-263 and PoP switch parameters at a rated current of 36 A

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      Table 2. Comparison of TO-263 and PoP switch parameters at a rated current of 36 A

      packageUds(turn-on)/nsUds(turn-off)/nsid(turn-on)/nsid(turn-off)/nsPloss(turn-on)/μJPloss(turn-off)/μJUds/V
      TO-2634.32.76.123.880.9320.1954
      PoP4.02.64.16.869.9212.3955
    • Table 3. Comparison of TO-263 and PoP switch parameters when the limit pulse current is 90 A

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      Table 3. Comparison of TO-263 and PoP switch parameters when the limit pulse current is 90 A

      packageUds(turn-on)/nsUds(turn-off)/nsid(turn-on)/nsid(turn-off)/nsPloss(turn-on)/μJPloss(turn-off)/μJUds/V
      TO-2633.82.222.915.8285.81168.4739
      PoP3.42.111.97.9129.5433.8735
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    Jiuxin Ma, Jianhao Ma, Lüheng Ren, Liang Yu, Chenguo Yao, Shoulong Dong. High speed package-on-package structure designed for SiC-MOSFET and its performance evaluation[J]. High Power Laser and Particle Beams, 2024, 36(2): 025019

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    Paper Information

    Category:

    Received: Jul. 9, 2023

    Accepted: Oct. 25, 2023

    Published Online: Mar. 21, 2024

    The Author Email: Liang Yu (yu_liang@cqu.edu.cn)

    DOI:10.11884/HPLPB202436.230212

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