[1] Gualtieri R. Multi-mode TES bolometer optimization for the LSPE-SWIPE instrument[J]. Journal of Low Temperature Physics, 184, 527-533(2016).

[2] Shishido H, Miyajima S, Narukami Y et al. Neutron detection using a current biased kinetic inductance detector[J]. Applied Physics Letters, 107, 232601(2015).

[3] Rabanus D, Graf U U, Philipp M et al. Phase locking of a 1.5 Terahertz quantum cascade laser and use as a local oscillator in a heterodyne HEB receiver[J]. Optics Express, 17, 1159-1168(2009).

[4] Fujii G, Ukibe M, Ohkubo M. Improvement of soft x-ray detection performance in superconducting-tunnel-junction array detectors with close-packed arrangement by three-dimensional structure[J]. Superconductor Science and Technology, 28, 104005(2015).

[5] LIAO Kai-Sheng, LI Zhi-Feng, WANG Chao et al. Si:P blocked impurity band detectors for far infrared detection[J]. Journal of Infrared and Millimeter Wave, 35, 37-41(2016).

[6] WANG Chao, LI Ning, DAI Ning et al. Ion-Implanted Si:As blocked impurity band detectors for VLWIR detection[J]. Journal of Infrared and Millimeter Waves, 39, 290-294(2020).

[7] Petroff M, Stapelbroek M G. Blocked impurity band detectors(1986).

[8] Stetson S B, Reynolds D B, Stapelbroek M G et al. Design and performance of blocked-impurity-band detector focal plane arrays[J]. Proceedings of SPIE - The International Society for Optical Engineering, 686, 48-65(1986).

[9] Watson D M, Huffman J E. Germanium blocked‐impurity‐band far‐infrared detectors[J]. Applied Physics Letters, 52, 1602-1604(1988).

[10] Zhu H, Weng Z P, Zhu J Q et al. Surface plasmon enhanced Si-based BIB terahertz detectors[J]. Applied Physics Letters, 111, 053505(2017).

[11] Chen J, Li G H, Chen B C et al. Uniformly broadband far-infrared response from the photocarrier tunneling of Mesa Si:P blocked-impurity-band detector[J]. IEEE Transactions on Electron Devices, 68, 560-564(2021).

[12] Zhu H, Wang C, Wang P et al. Optimized Si-based blocked impurity band detector under alternative operational mode[J]. IEEE Transactions on Electron Devices, 66, 3891-3895(2019).

[13] Zhu J Q, Zhu H, Xu H L et al. Impact of the structural parameters on the photoresponse of terahertz blocked-impurity-band detectors with planar structure[J]. IEEE Transactions on Terahertz Science and Technology, 10, 358-362(2020).

[14] Szmulowicz F, Madarasz F L. Blocked impurity band detectors—an analytical model: Figures of merit[J]. Journal of Applied Physics, 62, 2533-2540(1987).

[15] Haegel N M, Samperi S A, White A M. Electric field and responsivity modeling for far-infrared blocked impurity band detectors[J]. Journal of Applied Physics, 93, 1305-1310(2003).

[16] Mott N F, Twose W D. The theory of impurity conduction[J]. Advances in Physics, 10, 107-163(1961).

[17] Efros A L, Shklovskii B I, Yanchev I Y. Impurity conductivity in low compensated semiconductors[J]. Physica Status Solidi, 50, 45-52(2010).

[18] Bandaru J. Liquid helium growth and characteristion of germanium far infrared blocked impurity band detectors[D](2001).

[19] Cardozo B L. GaAs blocked impurity band detectors for far infrared astronomy[D](2004).

[20] Beeman J W, Goyal S, Reichertz L A et al. Ion-implanted Ge:B far-infrared blocked-impurity-band detectors[J]. Infrared Physics & Technology, 51, 60-65(2007).

[21] Rauter P, Fromherz T, Winnerl S et al. Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods[J]. Applied Physics Letters, 93, 261104(2008).

[22] Berggren K F, Sernelius B E. Band-gap narrowing in heavily doped many-valley semiconductors[J]. J Physical Review B, 24, 1971-1986(1981).

[23] Jain S C, Roulston D J. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1-x strained layers[J]. Solid-State Electronics, 34, 453-465(1991).

[24] Camacho-Aguilera R E, Han Z, Yan C et al. Direct band gap narrowing in highly doped Ge[J]. Applied Physics Letters, 102, 152106(2013).

[25] Liao K S, Li N, Wang C et al. Extended mode in blocked impurity band detectors for terahertz radiation detection[J]. Applied Physics Letters, 105, 143501(2014).

[26] Zhu H, Weng Z, Zhu J et al. Comparison of Photoresponse of Si-Based BIB THz Detectors[J]. IEEE Transactions on Electron Devices, 64, 1094-1099(2017).

[27] Frenkel J J P R. On pre-breakdown phenomena in insulators and electronic semi-conductors[J]. Physical Review, 54, 647(1938).

[28] Sze S M, NG K K[M]. Physics of semiconductor devices(2006).

[29] Martin B G, Lee H P, Jones E W. GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity‐band‐conduction photodetectors[J]. Applied Physics Letters, 68, 1250-1252(1996).

[30] Rogalski A[M]. Infrared detectors(2011).

[31] TANG Ding-Yuan, Mi Zheng-Yu[M]. Introduction to optoelectronic devices(1989).

[32] Liu X H, Zhou X H, Li N et al. Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors[J]. Journal of Applied Physics, 115, 124503(2014).

[33] Li Sheng S[M]. Semiconductor physical electronics(2007).

[34] Pan C Y, Yin Z W, Song Z Y et al. Dark current blocking mechanism in BIB far-infrared detectors by interfacial barriers[J]. IEEE Transactions on Electron Devices, 68, 2804-2809(2021).

[35] Simoen E, Dierickx B, Deferm L et al. The behavior of siliconp‐njunction‐based devices at liquid helium temperatures[J]. Journal of Applied Physics, 70, 1016-1024(1991).