Acta Physica Sinica, Volume. 68, Issue 20, 206101-1(2019)

Comparative study of n-GaN transition group refractory metal Ohmic electrode

Tian-Li He1, Hong-Yuan Wei2、*, Cheng-Ming Li2, and Geng-Wei Li1、*
Author Affiliations
  • 1School of Science, China University of Geoscience, Beijing 100083, China
  • 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    References(26)

    [14] Singh K, Chauhan A, Mathew M, Punia R, Meena S S, Gupta N, Kundu R S[J]. Appl. Phys. A, 125, 24(2019).

    [15] Shostachenko S, Porokhonko Y, Zakharchenko R, Burdykin M, Ryzhuk R, Kargin N, Kalinin B, Belov A, Vasiliev A[J]. J. Phys. Conf. Ser., 938, 012072(2017).

    [25] Bass J[J]. Landolt-Börnstein-Group Ⅲ Condensed Matter, 5-13(1982).

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    Tian-Li He, Hong-Yuan Wei, Cheng-Ming Li, Geng-Wei Li. Comparative study of n-GaN transition group refractory metal Ohmic electrode[J]. Acta Physica Sinica, 2019, 68(20): 206101-1

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    Paper Information

    Received: May. 10, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email: Li Geng-Wei (ligw@cugb.edu.cn)

    DOI:10.7498/aps.68.20190717

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