Acta Physica Sinica, Volume. 68, Issue 20, 206101-1(2019)
Figures & Tables(8)
Fig. 1. Ti-based multilayer metal system most commonly used in n-type GaN ohmic contact目前最常应用于n型GaN欧姆接触的Ti基多层金属体系
Fig. 2. The scheme of dot circular transmission line model (dot CTLM) in this experiment实验中用到的圆点型传输线模型(dot CTLM)结构
Fig. 3.
Fig. 4. AES depth profiles of Hf/Al electrodes: (a) No annealing and (b) after annealing at 650 ℃ for 60 s in N2 ambient. Hf/Al电极样品深度剖析的AES图 (a)未退火; (b) 650 ℃退火60 s
Fig. 5. Cross-sectional SEM image of each electrode: (a) Hf/Al, 650 ℃; (b) Hf/Al, 850 ℃; (c) Ti/Al, 650 ℃; (d) Ti/Al, 850 ℃各电极的截面SEM图像 (a) Hf/Al, 650 ℃; (b) Hf/Al, 850 ℃; (c) Ti/Al, 650 ℃; (d) Ti/Al, 850 ℃
Fig. 6. SEM image of each electrode annealed at 850 ℃ condition: (a) Hf/Al; (b) Ti/Al各电极在850 ℃条件下退火的表面SEM图 (a) Hf/Al; (b) Ti/Al
Table 1. Work function, melting point and resi-stivity of different metals.
View tableView in ArticleTable 1. Work function, melting point and resi-stivity of different metals.
金属 功函数/eV[ 24 ]熔点/K[ 17 ]电阻率/Ω·cm2(273 K)[ 25 ]Ti 4.33 1943 4.2×10–6 Al 4.24 933.60 2.4×10–6 Ni 5.35 1728 6.24×10–6 Au 5.31 1337.58 2.03×10–6 Zr 4.05 2128 3.86×10–6 Hf 3.94 2504 3.27×10–6
Table 2. Specific contact resistivity of each electrode sample at different annealing conditions.
View tableView in ArticleTable 2. Specific contact resistivity of each electrode sample at different annealing conditions.
样品名称 退火条件 (N2) 比接触电阻率/Ω·cm2 Hf/Al no annealing 1.21×10–4 Hf/Al 650 ℃ 60 s 4.28×10–5 Hf/Al 850 ℃ 30 s 1.13×10–4 Ti/Al 650 ℃ 60 s 5.85×10–5 Ti/Al 850 ℃ 30 s 1.27×10–4
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Tian-Li He, Hong-Yuan Wei, Cheng-Ming Li, Geng-Wei Li.
Paper Information
Received: May. 10, 2019
Accepted: --
Published Online: Sep. 17, 2020
The Author Email: Li Geng-Wei (ligw@cugb.edu.cn)
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