[1] [1] BALMER R S, BRANDON J R, CLEWES S L, et al. Chemical vapour deposition synthetic diamond: materials, technology and applications［J］. Journal of Physics: Condensed Matter, 2009, 21(36): 364221.

[3] [3] SONG J, LI H D, LIN F, et al. Plasmon-enhanced photoluminescence of Si-V centers in diamond from a nanoassembled metal-diamond hybrid structure［J］. CrystEngComm, 2014, 16(36): 8356.

[4] [4] SHIBATA T, KITAMOTO Y, UNNO K, et al. Micromachining of diamond film for MEMS applications［J］. Journal of Microelectromechanical Systems, 2000, 9(1): 47-51.

[5] [5] ALBIN S, WATKINS L. Electrical properties of hydrogenated diamond［J］. Applied Physics Letters, 1990, 56(15): 1454-1456.

[6] [6] KAWARADA H. High-current metal oxide semiconductor field-effect transistors on H-terminated diamond surfaces and their high-frequency operation［J］. Japanese Journal of Applied Physics, 2012, 51: 090111.

[9] [9] MAKI T, SHIKAMA S, KOMORI M, et al. Hydrogenating effect of single-crystal diamond surface［J］. Japanese Journal of Applied Physics, 1992, 31(Part 2, No. 10A): L1446-L1449.

[10] [10] KAWARADA H, AOKI M, ITO M. Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds［J］. Applied Physics Letters, 1994, 65(12): 1563-1565.

[11] [11] HIRAMA K, SATO H, HARADA Y, et al. Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer［J］. Japanese Journal of Applied Physics, 2012, 51: 090112.

[12] [12] WANG C J, SHIH M H, CHEN L T. A wideband open-slot antenna with dual-band circular polarization［J］. IEEE Antennas and Wireless Propagation Letters, 2015, 14: 1306-1309.

[13] [13] IMANISHI S, HORIKAWA K, OI N, et al. 3.8 W/mm RF power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity［J］. IEEE Electron Device Letters, 2019, 40(2): 279-282.

[14] [14] FENG Z H, WANG J J, HE Z Z, et al. Polycrystalline diamond MESFETs by Au-mask technology for RF applications［J］. Science China Technological Sciences, 2013, 56(4): 957-962.

[15] [15] YU X X, ZHOU J J, QI C J, et al. A high frequency hydrogen-terminated diamond MISFET with fT/fmax of 70/80 GHz［J］. IEEE Electron Device Letters, 2018, 39(9): 1373-1376.

[16] [16] YU X X, ZHOU J J, ZHANG S, et al. High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz［J］. Applied Physics Letters, 2019, 115(19): 192102.

[17] [17] YU X X, HU W X, ZHOU J J, et al. 1 W/mm output power density for H-terminated diamond MOSFETs with Al2O3/SiO2 Bi-layer passivation at 2 GHz［J］. IEEE Journal of the Electron Devices Society, 2020, 9: 160-164.

[20] [20] LU C H, LIU Q K, WANG Z T, et al. Preparation of CVD single crystal diamond and research of its infrared property［J］. Diamond and Abrasives Engineering, 2020, 40(06):20-24.

[21] [21] HEI L F, LIU J, LI C M, et al. Fabrication and characterizations of large homoepitaxial single crystal diamond grown by DC arc plasma jet CVD［J］. Diamond and Related Materials, 2012, 30: 77-84.