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Journal of Synthetic Crystals, Volume. 50, Issue 11, 2045(2021)

Effect of Nitrogen Doping on the Perfomances of the Hydrogen Terminated Diamond RF Transistors

LIU Xiaochen1,2、*, YU Xinxin3,4, GE Xingang1,2, JIANG Long1,2, LI Yifeng1,2, AN Xiaoming1,2, and GUO Hui1,2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    LIU Xiaochen, YU Xinxin, GE Xingang, JIANG Long, LI Yifeng, AN Xiaoming, GUO Hui. Effect of Nitrogen Doping on the Perfomances of the Hydrogen Terminated Diamond RF Transistors[J]. Journal of Synthetic Crystals, 2021, 50(11): 2045

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    Paper Information

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    Received: Aug. 13, 2021

    Accepted: --

    Published Online: Feb. 14, 2022

    The Author Email: Xiaochen LIU (liuxiaochen@hediamond.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology