Fig. 1. Shutter sequences in a period of AlInAsSb digital alloy lattice-matched to GaSb for MEE growth method.

Fig. 2. Schematic cross section of AlInAsSb DA SAGCM APD

Fig. 3. (a) HRXRD of Al_0.7In_0.3AsSb DA layer, (b) AFM of Al_0.7In_0.3AsSb DA layer

Fig. 4. (a) Epitaxial structure of Al_xIn_1-xAsSb DA grading layer, (b) HRXRD of Al_xIn_1-xAsSb DA grading layer, (c) AFM of Al_xIn_1-xAsSb DA grading layer

Fig. 4. (a) HRXRD of Al_0.4In_0.6AsSb DA layer, (b) AFM of Al_0.4In_0.6AsSb DA layer

Fig. 6. (a) Dark current, photocurrent, multiplication factor versus reverse bias of a 200 μm-diameter AlInAsSb DA SAGCM APD at room temperature, (b) measured capacitance versus bias of a typical 200 μm-diameter AlInAsSb DA SAGCM APD at room temperature