[1] Liu A C, Lai Y Y, Chen H C et al. A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap[J]. Micromachines, 14, 764(2023).

[2] Choi D C, Kim Y S, Kim K B et al. Spontaneous emission studies for blue and green InGaN-based light-emitting diodes and laser diodes[J]. Photonics, 11, 135(2024).

[3] Yu G, Li J C, Wen P J et al. Research progress on semiconductor micro/nanowire lasers[J]. Chinese Journal of Lasers, 47, 0701011(2020).

[4] Cao W Y, Zhang Y T, Wei Y F et al. Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well[J]. Acta Physica Sinica, 73, 077201(2024).

[5] Li Q B, Yu J X, Wang S Z et al. Research progress in the postprocessing and application of GaN crystal[J]. CrystEngComm, 25, 715-725(2023).

[6] Fu S S, Xiao Q Q, Tang H Z et al. First principles study on electronic structure and optical properties of Lu doped GaN at different doping concentration[J]. Acta Optica Sinica, 44, 0916001(2024).

[7] Kang X X, Chen N, Li S Y et al. Near‐field simultaneous measurement of gallium nitride electroluminescence spectrum and in‐situ temperature[J]. Chinese Journal of Lasers, 51, 1706003(2024).

[8] Liu Q F, Liu K, Li W Q et al. Design of blue band photonic-crystal surface-emitting lasers based on field distribution modulation and porous GaN DBR[J]. Acta Optica Sinica, 44, 2014003(2024).

[9] Yuan L D, Deng H X, Li S S et al. Unified theory of direct or indirect band-gap nature of conventional semiconductors[J]. Physical Review B, 98, 245203(2018).

[10] Chichibu S F. Review: defect-tolerant luminescent properties of low InN mole fraction InxGa1-xN quantum wells under the presence of polarization fields[J]. ECS Journal of Solid State Science and Technology, 9, 015016(2019).

[11] Yang J, Huang Y J, Liu Z S et al. Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells[J]. Optics Letters, 49, 1305-1308(2024).

[12] Nakamura S, Senoh M, Nagahama S I et al. Blue InGaN-based laser diodes with an emission wavelength of 450 nm[J]. Applied Physics Letters, 76, 22-24(2000).

[13] Lutgen S, Avramescu A, Lermer T et al. True green InGaN laser diodes[J]. Physica Status Solidi (a), 207, 1318-1322(2010).

[14] Nakatsu Y, Hirao T, Morizumi T et al. Blue and green edge-emitting laser diodes and vertical-cavity surface emitting lasers on C-plane GaN substrates[J]. Proceedings of SPIE, 12421, 124210F(2023).

[15] Behringer M, König H. Blue high-power laser diodes: beam sources for novel applications[J]. PhotonicsViews, 17, 60-63(2020).

[16] Li S K, Lei M L, Lang R et al. Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes[J]. Semiconductor Science Technology, 38, 075007(2023).

[17] Gerhard S, Naehle L, Jentzsch B et al. InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power[J]. Proceedings of SPIE, 12421, 124210G(2023).

[18] Castiglia A, Malinverni M, Rossetti M et al. Ultra-low threshold and temperature-stable InGaN blue and green laser diodes[J]. IEEE Photonics Technology Letters, 33, 1235-1237(2021).

[19] Yang Q Y, Zhang P L, Lu Q H et al. Application and development of blue and green laser in industrial manufacturing: a review[J]. Optics & Laser Technology, 170, 110202(2024).

[20] Li S K, Chen H Q, Lei M L et al. The critical impact of the waveguide thickness on the optical and threshold behaviors of InGaN-based green laser diodes[J]. Optik, 289, 171258(2023).

[21] Wang J F, Hu J H, Guan C W et al. Study of equivalent circuit of GaN based laser chip and packaged laser[J]. Scientific Reports, 14, 11368(2024).

[22] Wang J F, Hu J H, Laboratory P C et al. High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication[J]. Photonics Research, 12, 1186-1193(2024).

[23] Chi N, Lin X H, Luo Z T et al. Research on ultra-high-speed satellite visible light laser communication technology(invited)[J]. Laser & Optoelectronics Progress, 61, 0706002(2024).

[24] Zeng H, He Z Q, Fan Y R et al. Quantum light generation based on GaN microring toward fully on-chip source[J]. Physical Review Letters, 132, 133603(2024).

[25] Moody G, Sorger V J, Blumenthal D J et al. 2022 Roadmap on integrated quantum photonics[J]. Journal of Physics: Photonics, 4, 012501(2022).

[26] Yang J, Zhao D G, Liu Z S et al. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes[J]. Optics Letters, 47, 1666-1668(2022).

[27] Nakatsu Y, Nagao Y, Hirao T et al. Blue and green InGaN semiconductor lasers as light sources for displays[J]. Proceedings of SPIE, 11280, 11280S(2020).

[28] Kishimoto K, Hirao T, Morizumi T et al. Development of highly efficient blue and green edge-emitting laser diodes[J]. Proceedings of SPIE, 12886, 1288609(2024).

[29] Watanabe R, Kobayashi K, Yanagawa M et al. Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser[J]. Applied Physics Letters, 124, 131107(2024).

[30] Hu L, Li D Y, Liu J P et al. High-power GaN-based blue laser diodes with 7.5 W of light output power under continuous-wave operation(invited)[J]. Acta Photonica Sinica, 51, 0251209(2022).

[31] Tian A Q, Hu L, Li X et al. Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes[J]. Science China Materials, 65, 543-546(2022).

[32] Shi L, Yang T, Wang Y C et al. Development and challenges of GaN-based vertical-cavity surface-emitting lasers[J]. Chinese Journal of Lasers, 52, 0101008(2025).

[33] Bennett S E. Dislocations and their reduction in GaN[J]. Materials Science and Technology, 26, 1017-1028(2010).

[34] Schubert M F, Chhajed S, Kim J K et al. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes[J]. Applied Physics Letters, 91, 231114(2007).

[35] Vampola K J, Iza M, Keller S et al. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures[J]. Applied Physics Letters, 94, 061116(2009).

[36] Piprek J, Simon Li Z M. Sensitivity analysis of electron leakage in III-nitride light-emitting diodes[J]. Applied Physics Letters, 102, 131103(2013).

[37] Piprek J. Analysis of efficiency limitations in high-power InGaN/GaN laser diodes[J]. Optical and Quantum Electronics, 48, 471(2016).

[38] Ho I H, Stringfellow G B. Solid phase immiscibility in GaInN[J]. Applied Physics Letters, 69, 2701-2703(1996).

[39] Haller C, Carlin J F, Jacopin G et al. Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency[J], 111, 262101(2017).

[40] Gibart P. Metal organic vapour phase epitaxy of GaN and lateral overgrowth[J]. Reports on Progress in Physics, 67, 667-715(2004).

[41] Hiramatsu K, Nishiyama K, Motogaito A et al. Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth[J]. Physica Status Solidi (a), 176, 535-543(1999).

[42] Hiramatsu K, Nishiyama K, Onishi M et al. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)[J]. Journal of Crystal Growth, 221, 316-326(2000).

[43] Zheleva T S, Smith S A, Thomson D B et al. Pendeo-epitaxy: a new approach for lateral growth of gallium nitride structures[J]. MRS Internet Journal of Nitride Semiconductor Research, 4, 275-280(1999).

[44] Zheleva T S, Smith S A, Thomson D B et al. Pendeo-epitaxy: a new approach for lateral growth of gallium nitride films[J]. Journal of Electronic Materials, 28, L5-L8(1999).

[45] Kidoguchi I, Ishibashi A, Sugahara G et al. Air-bridged lateral epitaxial overgrowth of GaN thin films[J]. Applied Physics Letters, 76, 3768-3770(2000).

[46] Fareed R S Q, Adivarahan V, Chen C Q et al. Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN[J]. Applied Physics Letters, 84, 696-698(2004).

[47] Zang K Y, Wang Y D, Liu H F et al. Structural and optical properties of InGaN/GaN multiple quantum wells grown on nano-air-bridged GaN template[J]. Applied Physics Letters, 89, 171921(2006).

[48] Li L, Liu J P C, Liu L et al. Defect reduction via selective lateral epitaxy of GaN on an innovative masked structure with serpentine channels[J]. Applied Physics Express, 5, 051001(2012).

[49] Zhang W, Liu P C, Jackson B et al. Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN[J]. Journal of Applied Physics, 113, 144908(2013).

[50] Ji Q B, Li L, Zhang W et al. Dislocation reduction and stress relaxation of GaN and InGaN multiple quantum wells with improved performance via serpentine channel patterned mask[J]. ACS Applied Materials & Interfaces, 8, 21480-21489(2016).

[51] Wei T T, Zong H, Jiang S X et al. High-quality GaN epitaxially grown on Si substrate with serpentine channels[J]. Superlattices and Microstructures, 118, 284-288(2018).

[52] Lei M L, Chen H Q, Khan M S A et al. Wafer-scale heteroepitaxy GaN film free of high-density dislocation region with hexagonal 3D serpentine mask[J]. Applied Surface Science Advances, 17, 100449(2023).

[53] Wang J M, Xie N, Xu F J et al. Group-III nitride heteroepitaxial films approaching bulk-class quality[J]. Nature Materials, 22, 853-859(2023).

[54] Li S K, Yu G, Lang R et al. Analytical models of electron leakage currents in gallium nitride-based laser diodes and light-emitting diodes[J]. Optics Express, 30, 3973-3988(2022).

[55] Smowton P M, Blood P. Fermi level pinning and differential efficiency in GaInP quantum well laser diodes[J]. Applied Physics Letters, 70, 1073-1075(1997).

[56] Hafiz S, Zhang F, Monavarian M et al. Determination of carrier diffusion length in GaN[J]. Journal of Applied Physics, 117, 013106(2015).

[57] Schuelke R J, Lundstrom M S. Thermionic emission-diffusion theory of isotype heterojunctions[J]. Solid-State Electronics, 27, 1111-1116(1984).

[58] Raja M Y A, Brueck S R J, Osinski M et al. Wavelength-resonant enhanced gain/absorption structure for optoelectronic devices[C], PD23-21(1988).

[59] Corzine S W, Geels R S, Scott J W et al. Design of Fabry-Perot surface-emitting lasers with a periodic gain structure[J]. IEEE Journal of Quantum Electronics, 25, 1513-1524(1989).

[60] Hubáček T, Hospodková A, Kuldová K et al. Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs[J]. CrystEngComm, 21, 356-362(2019).

[61] Suihkonen S, Lang T, Svensk O et al. Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition[J]. Journal of Crystal Growth, 300, 324-329(2007).

[62] Ting S M, Ramer J C, Florescu D I et al. Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition[J]. Journal of Applied Physics, 94, 1461-1467(2003).

[63] Kumar M S, Park J Y, Lee Y S et al. Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures[J]. Journal of Physics D: Applied Physics, 40, 5050-5054(2007).

[64] Yu G, Chen H Q, Lang R et al. High-temperature crystallinity restoring layers and their optimal positions for ultra-thick InGaN/GaN multiple-quantum-well structures[J]. CrystEngComm, 23, 5609-5614(2021).

[65] Takahashi H, Ito A, Tanaka T et al. Effect of intentionally formed ‘V-defects’ on the emission efficiency of GaInN single quantum well[J]. Japanese Journal of Applied Physics, 39, L569(2000).

[66] Han S H, Lee D Y, Shim H W et al. Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes[J]. Applied Physics Letters, 102, 251123(2013).

[67] Hangleiter A, Hitzel F, Netzel C et al. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency[J]. Physical Review Letters, 95, 127402(2005).

[68] Guenther K H, Wierer P G, Bennett J M. Surface roughness measurements of low-scatter mirrors and roughness standards[J]. Applied Optics, 23, 3820-3836(1984).

[69] Chen H Q, Lei M L, Meng L H et al. Enhanced performance of InGaN light-emitting diodes via high-quality GaN and embedded air voids grown on hexagonal 3D serpentine mask sapphire substrates[J]. ACS Photonics, 10, 3233-3241(2023).

[70] Haller C, Carlin J F, Jacopin G et al. GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells[J]. Applied Physics Letters, 113, 111106(2018).

[71] Zhao X, Huang K, Bruckbauer J et al. Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11‒22) green LEDs grown on silicon[J]. Scientific Reports, 10, 12650(2020).

[72] Akasaka T, Gotoh H, Saito T et al. High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers[J]. Applied Physics Letters, 85, 3089-3091(2004).

[73] Haller C, Carlin J F, Mosca M et al. InAlN underlayer for near ultraviolet InGaN based light emitting diodes[J]. Applied Physics Express, 12, 034002(2019).

[74] Chen Y, Haller C, Liu W et al. GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: the critical role of nitrogen vacancies at the GaN surface[J]. Applied Physics Letters, 118, 111102(2021).

[75] Kasahara D. Semiconductor laser device[P].

[76] Geiser P, Jun J, Batlogg B et al. High pressure bulk crystal growth of (Ga, Al)N[M]. III-nitride devices and nanoengineering, 21-55(2008).

[77] Terentjevs A, Catellani A, Cicero G. Nitrogen vacancies at InN (11¯00) surfaces: a theoretical study[J]. Applied Physics Letters, 96, 171901(2010).

[78] Gelhausen O, Phillips M R, Goldys E M et al. Dissociation of H-related defect complexes in Mg-doped GaN[J]. Physical Review B, 69, 125210(2004).

[79] Chichibu S F, Shima K, Kojima K et al. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures[J]. Japanese Journal of Applied Physics, 58, SC0802(2019).

[80] Funato M, Matsuda Y, Kawakami Y. A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters[J]. Semiconductor Science Technology, 39, 013002(2024).

[81] Fichtner S, Yassine M, van de Walle C G et al. Clarification of the spontaneous polarization direction in crystals with wurtzite structure[J]. Applied Physics Letters, 125, 040501(2024).

[82] Hempel M, Dadgostar S, Jiménez J et al. Catastrophic optical damage in semiconductor lasers: physics and new results on InGaN high-power diode lasers[J]. Physica Status Solidi (RRL)–Rapid Research Letters, 16, 2100527(2022).

[83] Yang L C, Li G R, Gao X M et al. Topological-cavity surface-emitting laser[J]. Nature Photonics, 16, 279-283(2022).