Research and Progress on GaN‑Based Semiconductor Lasers (Invited)

Wenyu Cao; Linghai Meng; Menglai Lei; Shukun Li; Guo Yu; Huanqing Chen; Weihua Chen; Xiaodong Hu

doi:10.3788/CJL241245

Chinese Journal of Lasers, Volume. 52, Issue 5, 0501015(2025)

Research and Progress on GaN‑Based Semiconductor Lasers (Invited)

Wenyu Cao¹, Linghai Meng², Menglai Lei³, Shukun Li³, Guo Yu², Huanqing Chen³, Weihua Chen³, and Xiaodong Hu^2,3、*

¹Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, School of Physics and Electronic Engineering, Hubei University of Arts and Science, Xiangyang441053, Hubei , China

²Guangxi Hurricanechip Technology Co., Ltd., Liuzhou 545003, Guangxi , China

³State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China

show less

Abstract Get PDF(in Chinese)

Cited By

Article index updated: Sep. 8, 2025

The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)

Tools

Get Citation

Copy Citation Text

Wenyu Cao, Linghai Meng, Menglai Lei, Shukun Li, Guo Yu, Huanqing Chen, Weihua Chen, Xiaodong Hu. Research and Progress on GaN‑Based Semiconductor Lasers (Invited)[J]. Chinese Journal of Lasers, 2025, 52(5): 0501015

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: laser devices and laser physics

Received: Oct. 6, 2024

Accepted: Dec. 3, 2024

Published Online: Mar. 8, 2025

The Author Email: Xiaodong Hu (huxd@pku.edu.cn)

DOI:10.3788/CJL241245

CSTR:32183.14.CJL241245

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology