Chinese Optics Letters, Volume. 19, Issue 7, 071402(2021)
High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser
Fig. 1. Material properties of the laser crystal and SA. (a) Polarized absorption spectra of the Er:Yb:YAB crystal and (b) transmission spectrum TSA of the employed Co2+: MgAl2O4 crystal.
Fig. 3. Microchip laser pumped by a CW LD. (a) Average output power and pulse energy and (b) pulse repetition rate and pulse duration versus incident pump power.
Fig. 4. Microchip laser operated at the incident power of 6.3 W. (a) Pulse train profile and the pulse repetition rate. (b) Single-pulse profile and pulse duration; the inset shows the laser spectrum.
Fig. 5. Energy level structure and main transitions in the Er:Yb:YAB laser.
Fig. 6. Microchip laser pumped by a QCW LD. (a) Average output power and pulse energy and (b) pulse repetition rate and pulse duration versus pump peak power.
Fig. 7. Microchip laser operated at the QCW pump power of 20 W. (a) Pulse train profile and the pulse repetition rate. (b) Single-pulse profile and pulse duration; the inset shows the laser spectrum.
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Songqing Zha, Yujin Chen, Bingxuan Li, Yanfu Lin, Wenbin Liao, Yuqi Zou, Chenghui Huang, Zhanglang Lin, Ge Zhang, "High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser," Chin. Opt. Lett. 19, 071402 (2021)
Category: Lasers, Optical Amplifiers, and Laser Optics
Received: Oct. 28, 2020
Accepted: Dec. 21, 2020
Published Online: Apr. 2, 2021
The Author Email: Yujin Chen (cyj@fjirsm.ac.cn), Ge Zhang (zhg@fjirsm.ac.cn)