INFRARED, Volume. 46, Issue 3, 1(2025)

Control of ICP Etching on Electrodes Fabrication of Superlattice Infrared Detectors

Ang REN, Ming LIU, and Jing-feng LI
Author Affiliations
  • North China Research Institute of Electro-Optics, Beijing 100015, China
  • show less
    References(4)

    [1] [1] Sai-Halasz G A, Tsu R, Esaki L. A New Semiconductor Superlattice [J]. Appl Phys Lett, 1977, 30(12): 651653.

    [2] [2] Rogalski A, Martyniuk P, Kopytko M. InAs/GaSb Type-II Superlattice Infrared Detectors: Future Prospect [J]. Appl Phys Rev, 2017, 4(3): 031304.

    [4] [4] Plis E A. InAs/GaSb Type-II Superlattice Detectors [J]. Adv Electron, 2014, 1: 246769.

    [5] [5] Marozas B T, Hughes W D, Du X, et al. Surface Dark Current Mechanisms in III-V Infrared Photodetectors [J]. Opt Mater Express, 2018, 8(6): 14191424.

    Tools

    Get Citation

    Copy Citation Text

    REN Ang, LIU Ming, LI Jing-feng. Control of ICP Etching on Electrodes Fabrication of Superlattice Infrared Detectors[J]. INFRARED, 2025, 46(3): 1

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Received: Aug. 6, 2024

    Accepted: Apr. 11, 2025

    Published Online: Apr. 11, 2025

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2025.03.001

    Topics