To investigate the influence of different process parameters on the quality of entrance and exit holes, and etching depth during water-jet guided laser processing of silicon carbide (SiC) materials, multiple sets of experiments are designed by varying three critical parameters: laser power, scanning speed, and processing passes. Post-processing specimen morphologies are observed and measured using white light interferometry, with data analyzed via Origin software. The experimental results show that the increase of laser power during the processing of holes is helpful to reduce the hole taper and improve the roundness, and meanwhile, it has less effect on the hole diameter due to the rapid decrease of thermal conductivity and high melting point of SiC material at high temperature. While the scanning speed has little change on the entrance and exit diameters of the processed microholes, it has a greater effect on the exit roundness. With the increase of laser power, the decrease of scanning speed and the increase of processing times during the etching process, the etching depth of the material increases significantly. Compared to conventional laser techniques, water-jet guided lasers demonstrate superior performance in SiC processing by minimizing defects such as thermal damage and recast layers. This study provides valuable insights into optimizing process parameters for water-jet guided laser machining of SiC materials.