Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 187(2024)

A 66-112.5 GHz low noise amplifier with minimum NF of 3.9 dB in 0.1-μm GaAs pHEMT technology

Ze-Kun LI1, Ji-Xin CHEN1,2、*, Si-Dou ZHENG1, and Wei HONG1,2
Author Affiliations
  • 1State Key Laboratory for Millimeter Waves,Southeast University,Nanjing 210096,China
  • 2Purple Mountain Laboratory,Nanjing 211111,China
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    References(13)

    [1] Ciccognani W, Giannini F, Limiti E et al. Full W-band high-gain LNA in mHEMT MMIC technology[C], 314-317(2008).

    [2] Dyskin A, Ritter D, Kallfass I. Ultra wideband cascaded low noise amplifier implemented in 100-nm GaAs metamorphic-HEMT technology[C], 1-4(2012).

    [3] Leuther A, Ohlrogge M, Czornomaz L et al. 80 nm InGaAs MOSFET W-band low noise amplifier[C], 1133-1136(2017).

    [4] Zhang S, Li Q, Zhu W et al. A compact full W-band monolithic low noise amplifier for millimeter-wave imaging[C], 153-155(2018).

    [5] Li Z, Yan P, Chen J et al. A Wide-Bandwidth W-Band LNA in GaAs0.1 μm pHEMT Technology[C], 1-3(2020).

    [6] Ciccognani W, Limiti E, Longhi P E et al. MMIC LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology[J]. IEEE Journal of Solid-State Circuits, 45, 2008-2015(2010).

    [7] Thome F, Brückner P, Leone S et al. AW/F-Band Low-Noise Power Amplifier GaN MMIC with 3.5-5.5-dB Noise Figure and22.8-24.3-dBm Pout[C], 603-606(2022).

    [8] Thome F, Brückner P, Leone S et al. A wideband E/W-band low-noise amplifier MMIC in a 70-nm gate-length GaN HEMT technology[J]. IEEE Transactions on Microwave Theory and Techniques, 70, 1367-1376(2022).

    [10] Collantes J M, Pollard R D, Sayed M. Effects of DUT mismatch on the noise figure characterization: a comparative analysis of two Y-factor techniques[J]. IEEE Transactions on Instrumentation and Measurement, 51, 1150-1156(2002).

    [11] Byk E, Couturier A M, Camiade M et al. An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology[C], 111-114(2012).

    [12] Lee Y T, Chiong C C, Niu D C et al. A high gain E-band MMIC LNA in GaAs0.1-μm pHEMT process for radio astronomy applications[C], 456-459(2014).

    [13] Bessemoulin A, Tarazi J, McCulloch M C G et al. 1-µm GaAs PHEMT W-band low noise amplifier MMIC using coplanar waveguide technology[C], 1-2(2014).

    [14] Longhi P E, Pace L, Colangeli S et al. V-band GaAs metamorphic low-noise amplifier design technique for sharp gain roll-off at lower frequencies[J]. IEEE Microwave and Wireless Components Letters, 30, 601-604(2020).

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    Ze-Kun LI, Ji-Xin CHEN, Si-Dou ZHENG, Wei HONG. A 66-112.5 GHz low noise amplifier with minimum NF of 3.9 dB in 0.1-μm GaAs pHEMT technology[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 187

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    Paper Information

    Category: Research Articles

    Received: Jun. 20, 2023

    Accepted: --

    Published Online: Apr. 29, 2024

    The Author Email: Ji-Xin CHEN (jxchen@seu.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2024.02.007

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