Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 187(2024)

A 66-112.5 GHz low noise amplifier with minimum NF of 3.9 dB in 0.1-μm GaAs pHEMT technology

Ze-Kun LI1, Ji-Xin CHEN1,2、*, Si-Dou ZHENG1, and Wei HONG1,2
Author Affiliations
  • 1State Key Laboratory for Millimeter Waves,Southeast University,Nanjing 210096,China
  • 2Purple Mountain Laboratory,Nanjing 211111,China
  • show less
    Figures & Tables(10)
    Schematic of the proposed W-band UWB LNA
    (a) Layout of dual shunt capacitors;(b) RF isolation of the single shunt capacitor and the dual shunt capacitors
    Optimal noise source impedances and conjugate values of the input impedances of the LNA at 75-110 GHz after input matching
    Simulated gain of the first stage,second stage,third stage,fourth stage and the whole LNA
    Die photograph of the proposed LNA
    (a) Measured (solid lines) and simulated (dashed lines) S-parameters and measured stability factor of the proposed LNA;(b) measured and simulated group delay of the proposed LNA
    Measured and simulated input IP1dB
    NF measurement setups of the W-band LNA
    Measured and simulated NF
    • Table 1. Performance comparisons with GaAs-based V/W-band LNA

      View table
      View in Article

      Table 1. Performance comparisons with GaAs-based V/W-band LNA

      Ref.Tech.Freq./GHzPerc. BW/%Gain/dBNF/dBIP1dB/dBmPDC/mWFoM#Area/mm2
      40.1-μm GaAs pHEMT75-11037.817-224-5*-2014014.71.1
      670 nm GaAs mHEMT75-9523.523-272.5-2.7-40203.16
      770 nm GaN HEMT80-12241.524-33.43.5-5.5-7184013.63.5
      870 nm GaN HEMT63-10146.321-242.8-3.3-1330724.32
      110.1-μm GaAs pHEMT71-8619.1224-11262.55.93.75
      120.1-μm GaAs pHEMT60-7724.8284.5-441342
      130.1-μm GaAs pHEMT80-9416.1125-721.41.4
      1470 nm GaAs mHEMT57-6614.6231.8-18.85464.76
      This work0.1-μm GaAs pHEMT66-112.552.116.9-20.43.9-5.1-128826.61.85
    Tools

    Get Citation

    Copy Citation Text

    Ze-Kun LI, Ji-Xin CHEN, Si-Dou ZHENG, Wei HONG. A 66-112.5 GHz low noise amplifier with minimum NF of 3.9 dB in 0.1-μm GaAs pHEMT technology[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 187

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Research Articles

    Received: Jun. 20, 2023

    Accepted: --

    Published Online: Apr. 29, 2024

    The Author Email: Ji-Xin CHEN (jxchen@seu.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2024.02.007

    Topics