Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 187(2024)
A 66-112.5 GHz low noise amplifier with minimum NF of 3.9 dB in 0.1-μm GaAs pHEMT technology
Fig. 2. (a) Layout of dual shunt capacitors;(b) RF isolation of the single shunt capacitor and the dual shunt capacitors
Fig. 3. Optimal noise source impedances and conjugate values of the input impedances of the LNA at 75-110 GHz after input matching
Fig. 4. Simulated gain of the first stage,second stage,third stage,fourth stage and the whole LNA
Fig. 6. (a) Measured (solid lines) and simulated (dashed lines) S-parameters and measured stability factor of the proposed LNA;(b) measured and simulated group delay of the proposed LNA
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Ze-Kun LI, Ji-Xin CHEN, Si-Dou ZHENG, Wei HONG. A 66-112.5 GHz low noise amplifier with minimum NF of 3.9 dB in 0.1-μm GaAs pHEMT technology[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 187
Category: Research Articles
Received: Jun. 20, 2023
Accepted: --
Published Online: Apr. 29, 2024
The Author Email: Ji-Xin CHEN (jxchen@seu.edu.cn)