[1] MA Xu, LI Yunxue, HUANG Runyu et al. Development and application of short wavelength infrared detectors (invited)[J]. Infrared and Laser Engineering, 51, 20210897(2022).

[2] LI Xue, SHAO Xiumei, LI Tao et al. Developments of short-wave infrared InGaAs focal plane detectors[J]. Infrared and Laser Engineering, 49, 0103006(2020).

[3] CAO Jiasheng, LI Tao, WANG Hongzhen et al. Study on InP/InGaAs hetero-structure detector with unintentionally doping absorption layer[J]. Infrared and Laser Engineering, 50, 20210073(2021).

[4] ZHOU H, ZENG X, LI A et al. Upconversion NIR-II fluorophores for mitochondria-targeted cancer imaging and photothermal therapy[J]. Nature Communications, 11, 6183(2020).

[5] [5] RUTZ F, KLEINOW P, AIDAM R, et al. SWIR detects f low photon fluxes[C]Optical Engineering +Applications, SPlE, 2016, 9974: 99740G.

[6] [6] YUAN H, MEIXELL M, ZHANG J, et al. Low dark current small pixel large fmat InGaAs 2D photodetect array development at Teledyne Judson Technologies[C]Defense, Security, Sensing, SPIE, 2012, 83530835309.

[7] [7] HOOD A D, MACDOUGAL M H, MANZO J, et al. Largefmat InGaAs focal plane arrays f SWIR imaging[C]Defense, Security, Sensing, SPIE, 2012, 83580: 83530A.

[8] YU C, LI X, YANG B et al. Noise characteristi-cs analysis of short wave infrared InGaAs focal plane arrays[J]. Infrared Physics & Technology, 85, 74-80(2017).

[9] DASCALESCU I, PALADE C, LUNGU G A et al. Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering[J]. Journal of Alloys and Compounds, 1010, 177065(2025).

[10] SUN Z, WANG L, LUO H et al. Study of the hydrogen passivation effect of low-temperature-deposited amorphous silicon layers on SiGe solar cells grown on a silicon substrate[J]. ACS Applied Energy Materials, 6, 12064-12071(2023).

[11] LEE S H, BHOPAL M F, LEE D W et al. Review of advanced hydrogen passivation for high efficient crystalline silicon solar cells[J]. Materials Science in Semiconductor Processing, 79, 66-73(2018).

[12] DARWICHE S, NIKRAVECH M, MORVAN D et al. Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon[J]. Solar Energy Materials & Solar Cells, 91, 195-200(2007).

[13] HAHN G, GEIGER P, SONTAG D et al. Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon[J]. Solar Energy Materials & Solar Cells, 74, 57-63(2002).

[14] CHEN T C, YU I S, YANG Z P. Hydrogenation behaviors in passivated emitter and rear silicon solar cells with variously hydrogenated SiN_x films-ScienceDirect[J]. Applied Surface Science, 521, 146386(2020).

[15] CHEVALLIER J, JALIL A, THEYS B et al. Hydrogen passivation of shallow acceptors in p-type InP[J]. Semiconductor Science and Technology, 4, 87-90(1989).

[16] QIAO H, ZGOU W H, YE Z H et al. Study of hydrogenation on HgCdTe photovoltaic detectors[J]. Journal of Infrared and Millimeter Waves, 26, 326-328(2007).

[17] GAL M, TAVENDALE A, JOHNSON M J et al. Passivation of interface defects in lattice-mismatched InGaAs/GaAs heterostructures with hydrogen[J]. Journal of Applied Physics, 66, 968-970(1989).

[18] FORREST S R, LEHENY R F, NAHORY R E et al. In_0.53Ga_0.47As photodiodes with dark current limited by generation-recombination and tunneling[J]. Applied Physics Letters, 37, 322-325(1980).

[19] FORREST S R. Performance of In_xGa_1-xAs_yP_1-y photodiodes with dark current limited by diffusion, generation recombination, and tunneling[J]. IEEE Journal of Quantum Electronics, 17, 217-226(1981).

[20] [20] DJEDIDI A, ROUVIE A, REVERCHON J, et al. Investigation of the Influence of Zndiffusion profile on the electrical properties of InGaAsInP photodiodes[C]Indium Phosphide Related Materials (IPRM), 2012: 110112.

[21] DEWAMES R, LITTLETON R, WITTE K et al. Electro-optical characteristics of P⁺n In_0.53Ga_0.47as hetero-junction photodiodes in large format dense focal plane arrays[J]. Journal of Electronic Materials, 44, 2813-2822(2015).

[22] [22] ZIEL A V D, CHETE E R. Noise in solid state devices[J]. Advances in Electronics & Electron Physics, 1978, 46(3): 313383.

[23] TAUBKIN I I. Photoinduced and thermal noise in semiconductor p–n junctions[J]. Physics-Uspekhi, 9, 1289(2006).

[24] [24] HOLTZ O, ZHAO Q X. Impurities Confined in Quantum Structures[M]. Heidelberg: Springer Berlin, 2004: 117121.