Fig. 1. Schematic sectional view of PIN-type InGaAs photodetector and microscopic photograph of a Ф3 mm device. (a) Schematic diagram of the cross-section; (b) Microscope photo

Fig. 2. Typical manufacturing process of planar InGaAs detector and hydrogenation process

Fig. 3. Schematic diagram of noise testing system

Fig. 4. Schematic diagram of spectral response testing system

Fig. 5. Dark current component of PIN-type InGaAs photodetector under low bias voltage

Fig. 6. Dark current density-bias voltage curves of device measurement and composition fitting before and after hydrogenation. (a) Before hydrogenation; (b) After hydrogenation

Fig. 7. Comparison of changes in different dark current components before and after hydrogenation. (a) Diffusion current J_diff; (b) Generation-Recombination current J_G-R; (c) Shunt current J_sh

Fig. 8. Ratio of different dark current components under negative bias voltage

Fig. 9. Performance in dark current density before and after hydrogenation of the device under different biases

Fig. 10. Performance in dark noise before and after hydrogenation

Fig. 11. Typical changes in spectral response of devices before and after hydrogenation