Fig. 1. EL spectra from front facet of HPLD based on asymmetric InGaAs/AlGaAs single quantum well structure at different steady-state injection currents

Fig. 2. EL signal from front facet at injection current of 600 mA

Fig. 3. EL spectra from front and sidefacets of device at injection direct current of 600 mA

Fig. 4. EL II of device at steady-state injection current. (a) EL II from cavity front and side facets at 980 nm; (b) defect-related EL II at 1.3 μm

Fig. 5. Thermal image dynamics corresponding to SWIR and MWIR signals of device before and after COD under pulsed injection current

Fig. 6. EL spectra from front facet of 440 nm laser based on InGaN/GaN multiple quantum well structure under steady-state injection direct current

Fig. 7. EL spectra and analysis results of 440 nm laser under different injection current intensities. (a) EL spectra from front facet; (b) EL II versus injection current intensity

Fig. 8. EL spectra fromfront facet of 440 nm laser at different injection currents

Fig. 9. EL spectra from front facet of 440 nm laser under different injection currents