Semiconductor Optoelectronics, Volume. 46, Issue 3, 484(2025)
Study on Abrasive-Assisted Laser-Electrochemical Hybrid Machining of Through-Silicon Vias
To meet the demand for high-quality through-silicon via (TSV) machining, in this study, we propose an abrasive-assisted laser-electrochemical hybrid machining method. In this combined method, which leverages laser electrochemical processing and laser-induced cavitation effects, abrasive particles cause high-speed erosion of inner walls, effectively removing surface slag and oxide layers. The effects of abrasive assistance on machining quality are evaluated through a comparative analysis, and the influence of laser power and applied voltage on the processing results is systematically examined. The results show that abrasive-assisted machining substantially improves the quality of laser-electrochemical hybrid processing. At the optimal laser power of 26 W, the TSV inner walls exhibit low oxygen contents (3.27%), low surface roughness (454 nm), and small taper angles (3.26°), which confirm the superior machining performance of the proposed method. At an applied voltage of 30 V, the TSVs exhibit an optimal morphology with smooth sidewalls and a minimal taper angle.
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ZHANG Wenjie, MAO Dongchen, ZHU Hao. Study on Abrasive-Assisted Laser-Electrochemical Hybrid Machining of Through-Silicon Vias[J]. Semiconductor Optoelectronics, 2025, 46(3): 484
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Received: Apr. 8, 2025
Accepted: Sep. 18, 2025
Published Online: Sep. 18, 2025
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