Chinese Journal of Lasers, Volume. 51, Issue 11, 1101033(2024)

Simulation Techniques for Directed Self-Assembly Lithography: An Overview

Haolan Wang1,2, Tao Zhang1,2, Shisheng Xiong3, and Sikun Li1,2、*
Author Affiliations
  • 1Department of Advanced Optical and Microelectronic Equipment, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Zhangjiang Laboratory, Shanghai 201210, China
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    Figures & Tables(24)
    Schematic illustration of microstructures of diblock copolymer on different volume fractions of A block
    Functions of DSA lithography. (a) Lines and spaces pattern multiplication[40]; (b) hole pattern shrinking and multiplication[45]; (c) EUV pattern rectification[46]
    Currently implemented DSA models and simulation methods[63]
    Illustration of Hamiltonian as a function of field W in a one-dimensional setting
    Diverse equilibrium structures resulting from different initial conditions under the same set of parameters
    Two types of defects in self-assembled lamellae: dislocation (left) and disclination (right)[80]
    Top view of elongated template
    PMMA density profile in elongated templates, simulated by SCFT[82]. (a) Perfect structure in PMMA template; (b) perfect structure in neutral template; (c) perfect structure in mix template; (d) defect structure in PMMA template; (e) defect structure in neutral template; (f) defect structure in mix template
    The equilibrium 3D-structures predicted by SCFT. (a) Perfect state in PS mix template; (b) defect states in PS templates
    Different directed self-assembled structures in elongated templates obtained under increasing template length
    3D-structures resulting from varying separation strengths χN and guiding templates critical dimension in PMMA attractive templates[84]
    Schematics of cloud-density technique and particle-to-mesh (PM) technique. (a) Cloud-density technique where particles only contribute to the density in the vicinity; (b) PM technique where simulation space is discretized into grid points at which density is computed, the contributions yield by each particle to a certain node is dependent on the distance between them
    Blend system of copolymer and homopolymer over a substrate patterned with stripes bent at right angle[67]. (a) Top-down SEM image of the experimental system; (b) simulation result, where A and B domains are shown in red and blue, respectively
    Simulation flow (left) of parallel computing Monte Carlo approach with a schematic of non-interactive grids (right)[85]
    Monte Carlo simulation results of hole shrinking[86]. (a) Top-down view of minority block; (b) top-down view of majority block
    Initial (left) and equilibrium (right) state of Monte Carlo simulation for lamella-forming symmetric diblock copolymer
    Monte Carlo simulation results of stripe pattern multiplication[88]. (a) Substrate chemical pattern with a period of 2L0 (The substrate has a PS-attractive background, colored in yellow, and is filled with PMMA-attractive stripes with a width of W, colored in blue); (b) the guiding template is coated with diblock copolymer material with a thickness of Lz; (c) microdomain morphologies seen in simulations
    Top-down SEM images and 3D images of corresponding simulations[89]
    Simulation results of molecular dynamics model: top-down images of the time evolution of the directed self-assembled pattern[64]
    Description of the three potentials experienced by each coarse-grain particle in the molecular dynamics model[64]
    Bridge defect in stripe pattern[91]
    Simulation results of DPD model[92,94]
    A design flow for photomask with integration of optical proximity correction and DSA simulation[95]
    • Table 1. Summary of DSA simulation techniques

      View table

      Table 1. Summary of DSA simulation techniques

      ModelSimplified modelSelf-consistent field modelDynamical modelMonte Carlo method
      Fundamental principles

      Phenomenological model

      Approximation of physical process of DSA

      Mean-field approximationNewton’s laws of motion

      Monte Carlo simulation

      Metropolis criteria

      SpeedFastRelatively slowRelatively slowUltra-slow
      Error analysisDepends on the data andlevel of approximationDepends on the method forsolving the modifieddiffusion equationsDepends on the iteration algorithm and numerical methodDepends on the density functions and numerical method
      Fluctuation×
      Time evolution×××
      Application

      Full-chip mask synthesisand verification6973

      Inverse design70-72

      Process and self-assembled structure simulation408284

      Study of defect formation mechanism408082-83

      Study of DSA timeevolution process6289

      Process and self-assembled structure simulation9092

      Study of defect formation mechanism88-89

      Process and self-assembled structure simulation6786-89

      Study of defect formation mechanism87-89

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    Haolan Wang, Tao Zhang, Shisheng Xiong, Sikun Li. Simulation Techniques for Directed Self-Assembly Lithography: An Overview[J]. Chinese Journal of Lasers, 2024, 51(11): 1101033

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    Paper Information

    Category: laser devices and laser physics

    Received: Dec. 6, 2023

    Accepted: Mar. 18, 2024

    Published Online: May. 30, 2024

    The Author Email: Li Sikun (lisikun@siom.ac.cn)

    DOI:10.3788/CJL231536

    CSTR:32183.14.CJL231536

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