[1] Arya R, Kumari S, Pandey B et al. Structural insights into SARS-CoV-2 proteins[J]. Journal of Molecular Biology, 433, 166725(2021).

[2] Desai A N, Patel P. Stopping the spread of COVID-19[J]. JAMA, 323, 1516(2020).

[3] Mariano G, Farthing R J, Lale-Farjat S L M et al. Structural characterization of SARS-CoV-2: where we are, and where we need to be[J]. Frontiers in Molecular Biosciences, 7, 605236(2020).

[4] Buonanno M, Welch D, Shuryak I et al. Far-UVC light (222 nm) efficiently and safely inactivates airborne human coronaviruses[J]. Scientific Reports, 10, 10285(2020).

[5] Rattanakul S, Oguma K. Inactivation kinetics and efficiencies of UV-LEDs against pseudomonas aeruginosa, legionella pneumophila, and surrogate microorganisms[J]. Water Research, 130, 31-37(2018).

[6] Chen J, Loeb S, Kim J H. LED revolution: fundamentals and prospects for UV disinfection applications[J]. Environmental Science: Water Research & Technology, 3, 188-202(2017).

[7] Welch D, Buonanno M, Grilj V et al. Far-UVC light: a new tool to control the spread of airborne-mediated microbial diseases[J]. Scientific Reports, 8, 2752(2018).

[8] Wu M J, Wang Y J, Wu S C et al. Graphene-insulator-semiconductor ultraviolet light-responsive nitride LEDs for multi-applications[J]. ACS Applied Electronic Materials, 2, 2104-2112(2020).

[9] Zhao Z B, Cheng C, Jin Y H et al. Sterilization effect of all-solid-state 228 nm far ultraviolet pulsed laser[J]. Chinese Journal of Lasers, 49, 1515001(2022).

[10] Kneissl M, Seong T Y, Han J et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies[J]. Nature Photonics, 13, 233-244(2019).

[11] Mondal R K, Adhikari S, Chatterjee V et al. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies[J]. Materials Research Bulletin, 140, 111258(2021).

[12] Nagasawa Y, Hirano A. A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire[J]. Applied Sciences, 8, 1264(2018).

[13] Usman M, Malik S, Munsif M. AlGaN-based ultraviolet light-emitting diodes: challenges and opportunities[J]. Luminescence, 36, 294-305(2021).

[14] Zhao Z G, Xuan H W, Wang J C et al. Review on the research progress of vacuum ultraviolet solid-state lasers in 193 nm band[J]. Acta Optica Sinica, 42, 1134010(2022).

[15] Zhang A X, Ren B Y, Wang F et al. Performance enhancement of AlGaN-based deep ultraviolet laser diodes with step superlattice electron blocking layer and wedge-shaped hole blocking layer[J]. Laser & Optoelectronics Progress, 60, 1525001(2023).

[16] Lee J W, Kim D Y, Park J H et al. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission[J]. Scientific Reports, 6, 22537(2016).

[17] Maeda N, Hirayama H. Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer[J]. Physica Status Solidi C, 10, 1521-1524(2013).

[18] Song J O, Ha J S, Seong T Y. Ohmic-contact technology for GaN-based light-emitting diodes: role of P-type contact[J]. IEEE Transactions on Electron Devices, 57, 42-59(2010).

[19] Ellmer K. Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties[J]. Journal of Physics D: Applied Physics, 33, R17-R32(2000).

[20] Bae S K, Kim H, Lee Y et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes[J]. Nature Nanotechnology, 5, 574-578(2010).

[21] Formica N, Sundar Ghosh D, Chen T L et al. Highly stable Ag-Ni based transparent electrodes on PET substrates for flexible organic solar cells[J]. Solar Energy Materials and Solar Cells, 107, 63-68(2012).

[22] Min J H, Son M, Bae S Y et al. Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes[J]. Optics Express, 22, A1040-A1050(2014).

[23] Wang J, Chen H, Zhao Y et al. Programmed ultrafast scan welding of Cu nanowire networks with a pulsed ultraviolet laser beam for transparent conductive electrodes and flexible circuits[J]. ACS Applied Materials & Interfaces, 12, 35211-35221(2020).

[24] Liu G Z, Wang J, Ge Y H et al. Cu nanowires passivated with hexagonal boron nitride: an ultrastable, selectively transparent conductor[J]. ACS Nano, 14, 6761-6773(2020).

[25] Ye S R, Rathmell A R, Chen Z F et al. Metal nanowire networks: the next generation of transparent conductors[J]. Advanced Materials, 26, 6670-6687(2014).

[26] Cruz M A, Ye S R, Kim M J et al. Multigram synthesis of Cu-Ag core-shell nanowires enables the production of a highly conductive polymer filament for 3D printing electronics[J]. Particle & Particle Systems Characterization, 35, 1700385(2018).

[27] Eom H, Lee J, Pichitpajongkit A et al. Ag@Ni core-shell nanowire network for robust transparent electrodes against oxidation and sulfurization[J]. Small, 10, 4171-4181(2014).

[28] Lee H, Hong S, Lee J et al. Highly stretchable and transparent supercapacitor by Ag-Au core-shell nanowire network with high electrochemical stability[J]. ACS Applied Materials & Interfaces, 8, 15449-15458(2016).

[29] Fujioka A, Misaki T, Murayama T et al. Improvement in output power of 280-nm deep ultraviolet light-emitting diode by using AlGaN multi quantum wells[J]. Applied Physics Express, 3, 041001(2010).

[30] Pernot C, Kim M, Fukahori S et al. Improved efficiency of 255–280 nm AlGaN-based light-emitting diodes[J]. Applied Physics Express, 3, 061004(2010).

[31] Takano T, Mino T, Jun S K et al. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency[J]. Applied Physics Express, 10, 031002(2017).

[32] Zhang J P, Gao Y, Zhou L et al. Surface hole gas enabled transparent deep ultraviolet light-emitting diode[J]. Semiconductor Science and Technology, 33, 07LT01(2018).