Fig. 1. Material characterization of Cu@metal NSs. (a) SEM image of Cu@Ni NSs network, illustration shows welded junction between nanosilks; (b) SEM image of Cu@Pt NSs network; (c) SEM image of single nanosilk and EDS mapping images of Cu element, Ni element, and Pt element; (d) shell thickness as a function of metal/Cu molar ratio for representative shell metals

Fig. 2. Photoelectric performance of Cu@shell NSs network. (a) The relationship between the transmittance of Cu@Ni NSs at 280 nm and the film resistance, illustration shows Cu@Ni nanosilks network on the quartz. (b) photograph and schematic diagram of Cu@Ni NSs specific contact resistivity measurement by TLM model

Fig. 3. Photoelectric performance of DUV-LED based on Cu@Pt NSs transparent electrode. (a) Photograph of Cu@Pt NSs network in epitaxial layer;(b) I-V test, the illustration shows EL result with an obvious peak at 278 nm; (c) the relationship between the injection current and the output optical power with different electrode structures; (d) comparison of WPE values of DUV-LED under 20 mA current reported by different institutions

Fig. 4. Images of DUV-LED chip structure. (a) (b) Schematic diagrams of single DUV-LED chip; (c) photograph of single DUV-LED chip

Fig. 5. LED array optical simulation results. (a)-(d)Radiation power density distribution diagrams at 5 cm, 10 cm, 20 cm, 30 cm away from the light source (circles with a diameter of 8 cm); (e)‒(g) radiation power density distribution diagrams at 40 cm, 50 cm, 60 cm away from the light source

Fig. 6. Photograph and schematic of 180 mW DUV-LED device. (a) The circuit structure of DUV-LED module; (b) photograph of DUV-LED device

Fig. 7. Power density of 180 mW DUV-LED device under different irradiation distances

Fig. 8. Photograph of E. coli (left) and S. aureus (right) on LB medium that under DUV-LED expose