Phase transition properties of the LIPSS induced by femtosecond laser direct writing on PMN-PT crystal

Zhixiang Chen; Quanxin Yang; Hongliang Liu

doi:10.12086/oee.2023.220275

Opto-Electronic Engineering, Volume. 50, Issue 3, 220275(2023)

Phase transition properties of the LIPSS induced by femtosecond laser direct writing on PMN-PT crystal

Zhixiang Chen¹, Quanxin Yang^1、*, and Hongliang Liu^1,2、**

¹College of Electronic Information and Optical Engineering, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, Nankai University, Tianjin 300350, China

²State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China

show less

Abstract Get PDF(in Chinese)

References(0)

Tools

Get Citation

Copy Citation Text

Zhixiang Chen, Quanxin Yang, Hongliang Liu. Phase transition properties of the LIPSS induced by femtosecond laser direct writing on PMN-PT crystal[J]. Opto-Electronic Engineering, 2023, 50(3): 220275

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Article

Received: Oct. 25, 2022

Accepted: Dec. 30, 2022

Published Online: May. 4, 2023

The Author Email: Quanxin Yang (;), Hongliang Liu (;)

DOI:10.12086/oee.2023.220275

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology