Opto-Electronic Engineering, Volume. 50, Issue 3, 220275(2023)

Phase transition properties of the LIPSS induced by femtosecond laser direct writing on PMN-PT crystal

Zhixiang Chen1, Quanxin Yang1、*, and Hongliang Liu1,2、**
Author Affiliations
  • 1College of Electronic Information and Optical Engineering, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, Nankai University, Tianjin 300350, China
  • 2State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
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    Figures & Tables(4)
    Schematic diagram of femtosecond laser processing. (a) Schematic diagram of LIPSS in the PMN-PT crystal by femtosecond laser direct writing, the red arrow represents the direction of laser scanning, the blue arrow represents the direction of polarization of the laser; (b) Schematic diagram of the femtosecond laser-induced LIPSS
    Morphology of SWPSS induced by femtosecond laser. (a)~(c) SWPSS at velocities of 5 mm/s, 3 mm/s, and 2 mm/s respectively
    (a) Morphology of the LSFL with velocities of 0.7 mm/s, 0.8 mm/s, and 0.9 mm/s respectively; (b) Period of LIPSS in relation to laser parameters
    (a) Raman spectra of the LIPSS with the variation of temperature, the inset shows the variation of the Raman spectra at the Raman shift near the 50 cm−1 ; (b) Intensity of Raman signal of the PMN-PT crystal with the variation of temperature; (c) Intensity of Raman signal of the LIPSS with the variation of temperature
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    Zhixiang Chen, Quanxin Yang, Hongliang Liu. Phase transition properties of the LIPSS induced by femtosecond laser direct writing on PMN-PT crystal[J]. Opto-Electronic Engineering, 2023, 50(3): 220275

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    Paper Information

    Category: Article

    Received: Oct. 25, 2022

    Accepted: Dec. 30, 2022

    Published Online: May. 4, 2023

    The Author Email: Quanxin Yang (;), Hongliang Liu (;)

    DOI:10.12086/oee.2023.220275

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