Opto-Electronic Engineering, Volume. 50, Issue 3, 220275(2023)
Phase transition properties of the LIPSS induced by femtosecond laser direct writing on PMN-PT crystal
Fig. 1. Schematic diagram of femtosecond laser processing. (a) Schematic diagram of LIPSS in the PMN-PT crystal by femtosecond laser direct writing, the red arrow represents the direction of laser scanning, the blue arrow represents the direction of polarization of the laser; (b) Schematic diagram of the femtosecond laser-induced LIPSS
Fig. 2. Morphology of SWPSS induced by femtosecond laser. (a)~(c) SWPSS at velocities of 5 mm/s, 3 mm/s, and 2 mm/s respectively
Fig. 3. (a) Morphology of the LSFL with velocities of 0.7 mm/s, 0.8 mm/s, and 0.9 mm/s respectively; (b) Period of LIPSS in relation to laser parameters
Fig. 4. (a) Raman spectra of the LIPSS with the variation of temperature, the inset shows the variation of the Raman spectra at the Raman shift near the 50 cm−1 ; (b) Intensity of Raman signal of the PMN-PT crystal with the variation of temperature; (c) Intensity of Raman signal of the LIPSS with the variation of temperature
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Zhixiang Chen, Quanxin Yang, Hongliang Liu. Phase transition properties of the LIPSS induced by femtosecond laser direct writing on PMN-PT crystal[J]. Opto-Electronic Engineering, 2023, 50(3): 220275
Category: Article
Received: Oct. 25, 2022
Accepted: Dec. 30, 2022
Published Online: May. 4, 2023
The Author Email: Quanxin Yang (;), Hongliang Liu (;)