[1] [1] Alayo M I, Pereyra I, Carreno M N P. Thick SiOxNy and SiO2 films obtained by PECVD technique at low temperatures. Thin Solid Films, 1998, 332(2):40～45

[2] [2] Bazylenko M, Gross M, Gauja E et al.. Techniques for monolithic integration of silica-based waveguide devices with optoelectronics. Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS ′98, IEEE, 1998, 1:38～39

[3] [3] Hattangady S V, Alley R G, Fountain G G et al.. Effect of RF power on remote-plasma deposited SiO/sub 2/films. J. Appl. Phys., 1993, 73(11)7635～7642

[4] [4] Landheer D, Xu D X, Tao Y et al.. Effect of power on interface and electrical properties of SiO/sub 2/films produced by plasma-enhanced. J. Appl. Phys., 1995, 77(4):1600～1606

[5] [5] Worhoff K, Lambeck P V, Driessen A. Design, tolerance analysis, and fabrication of silicon oxynitride based planar optical waveguides for communication devices. J. Lightwave Technol., 1999, 17(8):1401～1407

[6] [6] Hoffmann M, Kopka P, Voges E. Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimensions for optical communication systems. IEEE Photon. Technol. Lett., 1997, 9(9):1238～1240

[7] [7] Viard J, Beche E, Perarnau D et al.. XPS and FTIR study of silicon oxynitride thin films. J. European Ceramic Society, 1997, 17(15～16):2025～2028

[9] [9] Bazylenko M, Gross M, Gauja E et al.. Techniques for monolithic integration of silica-based waveguide devices with optoelectronics. Lasers and Electro-Optics Society Annual Meeting, 1998, LEOS ′98. IEEE, 1998, 1:38～39