The distributed Bragg reflector (DBR) is a crucial component of vertical-cavity surface-emitting laser (VCSEL), relying on the multilayer stacking of high-refractive-index and low-refractive-index materials to achieve high reflectivity through interference superposition of reflected light. The DBR structure of traditional VCSELs typically uses the AlGaAs material system, however, due to the small difference in refractive indices between materials with different Al compositions, the reflection bandwidth of the DBR structure is narrow, which affects the mode stability of VCSEL. The critical absorption wavelength of the AlGaAs material system is relatively long, resulting in some absorption losses. Moreover, the multi-layer growth process of AlGaAs DBR requires extremely high precision, increasing manufacturing difficulty and cost. The use of metal-organic chemical vapor deposition (MOCVD) to grow DBR structures typically requires high temperatures, making it incompatible with the photolithographic lift-off process for optoelectronic devices, which is not conducive to patterned growth. Therefore, this paper investigates a DBR structure with a wide reflection bandwidth, low absorption loss in the visible and near-infrared bands, and the ability to be deposited at room temperature, which perfectly matches the fabrication process of VCSEL devices.In this study, the reflection spectrum of the SiO₂/ZnS material system DBR structure was simulated and calculated to determine the number of periods required to meet the requirements of a wide reflection bandwidth and high reflectivity at the target wavelength (Fig.3). The thickness tolerances of the two materials in the DBR structure were also calculated. The process flow for the fabrication of the inner cavity contact VCSEL device has been designed (Fig.5), and magnetron sputtering was used to deposit the DBR structure on VCSEL devices, as well as on quartz glass and GaAs substrates. The reflection spectrum of the deposited DBR structure was measured using a micro-area spectroscopic measurement system. Additionally, the P-I-V characteristics and spectral properties of the devices were tested using a laser testing system.Using a micro-area spectroscopic measurement system, the reflection spectra of an 8-period DBR structure deposited on quartz glass and GaAs substrates were obtained. The designed center wavelength was 850 nm, and the reflection bandwidth with reflectivity exceeding 99% reached 209 nm (Fig.6). The VCSEL device with an oxide aperture of 8 μm exhibited a threshold current of 0.5 mA and achieved a peak output power of 1.55 mW at an injection current of 3.45 mA (Fig.9). The central wavelength in the spectrum was 843 nm, and the far-field divergence angle was less than 20.6°(Fig.10). The devices with the DBR center wavelength offset by 50 nm also achieved stable lasing, with no significant differences in P-I-V characteristics and spectral properties compared to devices matching the designed center wavelength. These results indicate that precise matching of the center wavelength to the design parameters is not necessary, further validating the broadband advantage of this DBR structure.This study investigated vertical-cavity surface-emitting laser (VCSEL) with broadband mirrors based on the SiO₂/ZnS material system. A broadband DBR structure using the SiO₂/ZnS material system was designed through simulations, and the results showed that the DBR structure achieved a high reflectivity exceeding 99% within a reflection bandwidth of 209 nm, meeting the requirements for broadband VCSEL applications. VCSEL devices with the broadband DBR were fabricated and characterized, exhibiting excellent P-I-V performance at room temperature, with a threshold current of 0.5 mA and a peak output power of 1.55 mW. Additionally, the broadband DBR structure demonstrated a high tolerance to center wavelength variations, maintaining stable VCSEL output over a wide range of wavelength shifts. This characteristic significantly reduces the precision requirements for film deposition during fabrication, providing feasibility for large-scale, low-cost VCSEL production.