[1] Wang L, Zhang L, Li Y et al. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application[J]. Crystals, 7, 63(2017).

[2] Lee J J, Kim J D, Razeghi M. Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates[J]. Applied Physics Letters, 73, 602-604(1998).

[3] Sandall I C, Bastiman F, White B et al. Demonstration of InAsBi photoresponse beyond 3.5μm[J]. Applied Physics Letters, 104, 133(2014).

[4] Gu Y, Zhang Y, Chen X et al. Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP[J]. Applied Physics Letters, 108, 3874(2016).

[5] Francoeur S, Seong M J, Mascarenhas A et al. Band gap of GaAs1-xBix, 0. Applied Physics Letters, 82, 3874-3876(2003).

[6] Zhou M, Liang R, Zhou Z et al. Potentiality of Bi and Mn co-doped lead-free NaNbO3 ceramics as a pyroelectric material for uncooled infrared thermal detectors[J]. Journal of the European Ceramic Society, 39, 2058-2063(2019).

[7] Glema J, Palenskis V, Geiutis A et al. Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes[J]. Materials, 12, 673(2019).

[8] Lira A, Ramírez M O, Solé J G et al. Photoluminescence of Bi4Si3O12:Er3+ crystal excited in the commercial laser diode emission region[J]. Optical Materials, 29, 605-609(2005).

[9] Shan W, Walukiewicz W, Iii J W A et al. Band Anticrossing in GaInNAs Alloys[J]. Phys.Rev.lett, 82, 1221-1224(1999).

[10] Albert K, Wu J, Walukiewicz W et al. Valence-band anticrossing in mismatched Ⅲ-Ⅴ semiconductor alloys[J]. Physical Review. B, Condensed Matter And Materials Physics, 75, 045203.1-045203.6(2007).

[11] Francoeur S, Tixier S, Young E et al. Bi isoelectronic impurities in GaAs[J]. Physical Review B, 77, 439-446(2008).

[12] Li H, Wang Z. Bismuth-Containing Compounds[J]. Springer Series in Materials Science(2013).

[13] Das S C, Das T D, Dhar S. Infrared absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy[J]. Infrared Physics & Technology, 55, 306-308(2012).

[14] Rajpalke M K, Linhart W M, Birkett M et al. Growth and properties of GaSbBi alloys[J]. Applied Physics Letters, 103(2013).

[15] Samajdar D P, Das T D, Dhar S. Valence band anticrossing model for GaSb1-xBix and GaP1-xBix using k·p method[J]. Materials Science in Semiconductor Processing, 40, 539-542(2015).

[16] Yoshida J, Kita T, Wada O et al. Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy[J]. Japanese Journal of Applied Physics, 42, 371-374(2003).

[17] Fluegel B, Francoeur S, Mascarenhas A et al. Giant spin-orbit bowing in GaAs1-xBix[J]. Phys. Rev. Lett, 97, 067205(2006).

[18] Zhang Y, Yue L, Chen X et al. Wavelength extension in GaSbBi quantum wells using delta-doping[J]. Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics, 744, 667-671(2018).

[19] Wang S, Zhao Q, Wang X et al. Sadeghi M , Larsson A . 1.3 to 1.5 μm light emission from InGaAS/GaAs quantum wells[J]. Applied Physics Letters, 85, 875-877(2004).

[20] Schubert E F, Horikoshi Y, Ploog K. Radiative electron-hole recombination in a new sawtooth semiconductor superlattice grown by molecular-beam epitaxy[J]. Physical Review B, 32, 1085-1089(1985).

[21] Harris J J. Delta-doping of semiconductors[J]. Journal of Materials Science Materials in Electronics(1993).

[22] Chen X, Song Y, Zhu L et al. Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence[J]. Journal of Applied Physics, 113, 153505-153507(2013).

[23] Shao J, Lu W, Lu X et al. Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer[J]. Review of Scientific Instruments, 77, 063104(2006).

[24] Filipchenko A S, Kurenkeev T B, Bolshakov L P et al. Photoluminescence of heavily doped n-type gallium antimonide[J]. Physica Status Solidi A-Applied Research, 48, 281-285(1978).

[25] Bignazzi A, Bosacchi A, Magnanini R. Photoluminescence study of heavy doping effects in Te-doped GaSb[J]. Journal of Applied Physics, 81, 7540-7547(1997).

[26] Shao J, Lu X, Yue F et al. Magnetophotoluminescence study of GaxIn1-xP quantum wells with CuPt-type lon-range ordering[J]. Journal of Applied Physics, 100, 053522(2006).

[27] Shao J, Lu C, Wei L et al. Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs[J]. Applied Physics Letters, 96, 121915(2010).

[28] Shao J, Lu W, Tsen G et al. Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice[J]. Journal of Applied Physics, 112, 063512(2012).

[29] Shao J, Qi Z, Zhao H et al. Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells[J]. Journal of Applied Physics, 118, 165305(2015).

[30] Yamashita K, Yoshimoto M, Oe K. Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication[J]. Physica Status Solidi. C, Conferences and critical reviews, 3, 693-696(2006).

[31] Gladysiewicz M, Kudrawiec R, Wartak M S. Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range[J]. Journal of Applied Physics, 119, 553-226(2016).

[32] Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III-V compound semiconductors and their alloys[J]. Journal of Applied Physics, 89, 5815-5875(2001).

[33] Chen X, Zhao H, Wu X et al. Bi‐Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films[J]. Physica Status Solidi (b), 256(2019).

[34] Yue, Li, Chen et al. Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films[J]. Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics, 742, 780-789(2018).

[35] WANG Jian, HUANG Xian, LIU Li et al. Effect of Temperature and Current on LED Luminous Efficiency[J]. Chinese Journal of Luminescence, 29, 358-362(2008).

[36] Yan B, Chen X, Zhu L et al. Bismuth-induced band-tail states in GaAsBi probed by photoluminescence[J]. Applied Physics Letters, 114, 052104(2019).