Fig. 1. Variable temperature PL spectrum of GaSbBi SQW with a sheet density of 1.14×10¹² cm^-2

Fig. 2. 100 mW PL spectra of GaSbBi SQW samples and Substrates with different sheet densities

Fig. 3. Power-dependent PL spectra of GaSbBi SQW with a sheet density of 1.14×10¹² cm^-2 and the reference. Inset：Enlargement for the region I of the doped sample

Fig. 4. Excitation power-dependent PL integral intensity in region I for GaSbBi SQW samples with different sheet densities and the references. Sheet density：（a）1.14×10¹² cm^-2，（b）2.28×10¹² cm^-2，（c）3.42×10¹² cm^-2，and（d）4.56×10¹² cm^-2

Fig. 5. Relative reduction of emission efficiency in region Ⅰ（a）and Ⅱ（b）

Fig. 6. The schematic diagram of electronic transition and recombination process

Fig. 7. Excitation power-dependent PL integral intensity in region II，sheet density：（a）1.14×10¹² cm^-2，（b）2.28×10¹² cm^-2，^{（c）3.42×1012 cm-2，and（d）4.56×1012 cm-2}

Fig. 8. PL peak energy vs excitation power for GaSbBi SQWs with different sheet density and the references. Sheet density：（a）1.14×10¹² cm^-2，（b）2.28×10¹² cm^-2，^{（c）3.42×1012 cm-2，and（d）4.56×1012 cm-2}