Chinese Journal of Lasers, Volume. 33, Issue 9, 1159(2006)
InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency[J]. Chinese Journal of Lasers, 2006, 33(9): 1159