Chinese Journal of Lasers, Volume. 33, Issue 9, 1159(2006)

InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency

[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    References(4)

    [1] [1] P. A. Crump, T. R. Crum, M. DeVito et al.. High efficiency, high power 808-nm laser array and stacked arrays optimized for elevated temperature operation [C]. SPIE, 2004, 5336:144~155

    [2] [2] Won T. Tsang. Chemical beam epitaxy [J]. IEEE Cirsuits and Devices Magazine, 1988, 4(5):18~24

    [6] [6] Shun Lien Chuang. Efficient band-structure calculations of strained quantum wells [J]. Phys. Rev. B, 1991, 43(12):9649~9661

    [8] [8] Y. Kokubo, I. Ohta. Refractive index as a function of photon energy for AlGaAs between 1.2 and 1.8 eV [J]. J. Appl. Phys., 1997, 81(4):2042~2043

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    [2] Chen Xiang, Mi Xianwu. Response of Coupling Strength of Quantum Dot-Cavity System to Incoherent Pump[J]. Laser & Optoelectronics Progress, 2011, 48(6): 62701

    [3] Jin Zhejun, Liu Guojun, Li Zhanguo, Li Mei. Inter-Subband Transition Calculation of InP Based InGaAlAs/InGaAsSb Strained Quantum Well Lasers[J]. Acta Optica Sinica, 2008, 28(s1): 60

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency[J]. Chinese Journal of Lasers, 2006, 33(9): 1159

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    Paper Information

    Category: Laser physics

    Received: Feb. 21, 2006

    Accepted: --

    Published Online: Sep. 14, 2006

    The Author Email: (lijianjun@bjut.edu.cn)

    DOI:

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