Chinese Journal of Lasers, Volume. 33, Issue 9, 1159(2006)
InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency
Figures & Tables(0)
Tools
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency[J]. Chinese Journal of Lasers, 2006, 33(9): 1159
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20