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Chinese Journal of Lasers, Volume. 47, Issue 7, 701020(2020)

Design and Fabrication of 1160-nm Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser

Zhang Zhuo1,2, Ning Yongqiang1, Zhang Jianwei1、*, Zhang Jiye1,2, Zeng Yugang1, Zhang Jun1, Zhang Xing1, Zhou Yinli1, Huang Youwen1, Qin Li1, Liu Yun1, and Wang Lijun1
Author Affiliations
  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (8)
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    References (34)
    Cited By (5)
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    Figures & Tables(8)
    VECSEL structure and light field distribution inside the chip. (a) Diagram of VECSEL system; (b) optical field distribution in inner layer of gain chip

    Fig. 1. VECSEL structure and light field distribution inside the chip. (a) Diagram of VECSEL system; (b) optical field distribution in inner layer of gain chip

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    Sub-energy-level separation of InGaAs quantum wells

    Fig. 2. Sub-energy-level separation of InGaAs quantum wells

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    Gain spectra of InGaAs quantum wells at different carrier concentrations

    Fig. 3. Gain spectra of InGaAs quantum wells at different carrier concentrations

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    Gain spectrum comparison of InGaAs quantum well

    Fig. 4. Gain spectrum comparison of InGaAs quantum well

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    Reflection spectrum of VECSEL gain chip

    Fig. 5. Reflection spectrum of VECSEL gain chip

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    Output power curve of VECSEL with pump power at different gain chip temperatures

    Fig. 6. Output power curve of VECSEL with pump power at different gain chip temperatures

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    Far field distribution of output beam intensity of VECSEL system, and the inset is 2D color map of output spot

    Fig. 7. Far field distribution of output beam intensity of VECSEL system, and the inset is 2D color map of output spot

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    • Table 1. Comparison of parameters at similar wavelength of different VECSELs

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      Table 1. Comparison of parameters at similar wavelength of different VECSELs

      MechanismTypes of semiconductor laserPeak power /mWLasing wavelength /nm
      Mechanism in Ref.[29]Electrically pumped0.181170
      Mechanism in Ref.[30]Electrically pumped1.531180
      Mechanism in Ref.[31]Optically pumped10001160
      Mechanism in Ref.[32]Optically pumped (QDs gain region)2.451148
      Mechanism in Ref.[33]Optically pumped (DBR-free)20001150
      Mechanism in Ref.[34]Optically pumped (DBR-free)2500(two VECSELs)1160
      Proposed mechanismOptically pumped10231160
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    Zhang Zhuo, Ning Yongqiang, Zhang Jianwei, Zhang Jiye, Zeng Yugang, Zhang Jun, Zhang Xing, Zhou Yinli, Huang Youwen, Qin Li, Liu Yun, Wang Lijun. Design and Fabrication of 1160-nm Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser[J]. Chinese Journal of Lasers, 2020, 47(7): 701020

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    Paper Information

    Special Issue:

    Received: Mar. 3, 2020

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email: Jianwei Zhang (zhangzhuo18@mails.ucas.edu.cn)

    DOI:10.3788/CJL202047.0701020

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology