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Journal of Semiconductors, Volume. 45, Issue 12, 122501(2024)

Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs

Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao*, and Genquan Han
Author Affiliations
  • School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
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    [1] X B Yuan, I Laird, S Walder. Opportunities, challenges, and potential solutions in the application of fast-switching SiC power devices and converters. IEEE Trans Power Electron, 36, 3925(2021).

    [2] J B He, T F Zhao, X Jing et al. Application of wide bandgap devices in renewable energy systems-Benefits and challenges. 2014 International Conference on Renewable Energy Research and Application (ICRERA), 749(2014).

    [3] L Ceccarelli, P D Reigosa, F Iannuzzo et al. A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. Microelectron Reliab, 76/77, 272(2017).

    [4] A Pérez-Tomás, P Brosselard, P Godignon et al. Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors. J Appl Phys, 100, 114508(2006).

    [5] M A Rodríguez-Blanco, A Vázquez-Pérez, L Hernández-González et al. Fault detection for IGBT using adaptive thresholds during the turn-on transient. IEEE Trans Ind Electron, 62, 1975(2015).

    [6] A Fayyaz, L Yang, A Castellazzi. Transient robustness testing of silicon carbide (SiC) power MOSFETs. 2013 15th European Conference on Power Electronics and Applications (EPE), 1(2013).

    [7] S Lefebvre, Z Khatir, F Saint-Eve. Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions. IEEE Trans Electron Devices, 52, 276(2005).

    [8] G Romano, L Maresca, M Riccio et al. Short-circuit failure mechanism of SiC power MOSFETs. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 345(2015).

    [9] C B Lin, J P Wu, H Y Xu et al. Comparison and analysis of short circuit performance of 1200V SiC MOSFETs. 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 81(2020).

    [10] X T Zhou, H Y Su, Y Wang et al. Investigations on the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive short-circuit tests. IEEE Trans Electron Devices, 63, 4346(2016).

    [11] H Du, P Diaz Reigosa, L Ceccarelli et al. Impact of repetitive short-circuit tests on the normal operation of SiC MOSFETs considering case temperature influence. IEEE J Emerg Sel Top Power Electron, 8, 195(2020).

    [12] A E Awwad, S Dieckerhoff. Short-circuit evaluation and overcurrent protection for SiC power MOSFETs. 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 1(2015).

    [13] X C Deng, H Zhu, X Li et al. Investigation and failure mode of asymmetric and double trench SiC mosfets under avalanche conditions. IEEE Trans Power Electron, 35, 8524(2020).

    [14] A Tsibizov, I Kovačević-Badstübner, B Kakarla et al. Accurate temperature estimation of SiC power mosfets under extreme operating conditions. IEEE Trans Power Electron, 35, 1855(2020).

    [15] J J An, M Namai, H Yano et al. Methodology for enhanced short-circuit capability of SiC MOSFETs. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 391(2018).

    [16] Z Q Wang, X J Shi, L M Tolbert et al. Temperature-dependent short-circuit capability of silicon carbide power MOSFETs. IEEE Trans Power Electron, 31, 1555(2016).

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    Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao, Genquan Han. Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J]. Journal of Semiconductors, 2024, 45(12): 122501

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    Paper Information

    Category: Research Articles

    Received: Jun. 7, 2024

    Accepted: --

    Published Online: Jan. 15, 2025

    The Author Email: Sheng Gao (SGao)

    DOI:10.1088/1674-4926/24060009

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology