Fig. 1. (Color online) Single pulse short-circuit test bench. (a) Schematic diagram and (b) physical diagram.

Fig. 2. (Color online) Short-circuit waveform of SiC MOSFETs at 400 V DC voltage. (a) Product A, (b) Product B.

Fig. 3. (Color online) Short-circuit waveform of SiC MOSFETs at 800 V DC voltage. (a) Product A, (b) Product B.

Fig. 4. (Color online) Chip surface of post-failure SiC MOSFETs after short circuit. (a) 400 V, (b) 800 V.

Fig. 5. (Color online) (a) Gate−source leakage current and (b) drain−source leakage current before and after opening the lid.

Fig. 6. (Color online) Hot spot location. (a) Over all view of chip, (b) zoomed in the hot spot.

Fig. 7. (Color online) FIB-TEM image at the hot spot.

Fig. 8. (Color online) SiC MOSFET structure schematic diagram.

Fig. 9. (Color online) Comparison of short-circuit characteristics between simulated and measured devices at 400 V DC bias voltage.

Fig. 10. (Color online) (a) Current distribution and (b) temperature distribution for short-circuit end transient at 400 V DC bias voltage.

Fig. 11. (Color online) Comparison of short-circuit characteristics between simulated and measured devices at 800 V DC bias voltage.

Fig. 12. (Color online) (a) Electrical-field along SiC/SiO₂ interface and (b) impact ionization distribution for short-circuit end transient at 800 V DC bias voltage.