11. Key Laboratory for Palygorskite Science and Applied Technology of Jiangsu Province, Faculty of Chemical Engineering, Huaiyin Institute of Technology, Huaian 223003, China
33. Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
44. MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
1. Optical and morphology characterization of the CuInS-based QDs(a) Synthetic route of the CuInS-based QDs; (b) Photograph of the CuInZnS@ZnS QDs with shell growth of 20 h (Cu : In : Zn is 1 : 2 : 3) under 365 nm showing brilliant luminescence; (c) Transient PL decays of the CuInZnS@ZnS QDs with different shell growth time (Cu : In : Zn is 1 : 2 : 3); (d) TEM images of the CuInZnS/ZnS QDs (Cu : In : Zn is 1 : 2 : 3) with shell growth of 20 h.Colorful figures are available on website
S2. Digital photographs of CuInS QDs in a typical nucleation growth process under daylight lamp and UV lamp (365 nm)DDT was chosen as the sulfur source, surface ligand, and solvent. The reaction temperature was 200 ℃
2. Schematic depictions of relaxation processes in stoichiometric CuInS QDs (a), Cu-deficient CuInS QDs (b), and Cu-deficient CuInZnS@ZnS core/shell QDs (c)(a) Photon absorption is mainly due to the VB to CB transition. For the CuInS QDs with Cu/In ratio close to stoichiometric, the PL emission was due to radiative recombination of the CB electron with the hole existing in the intragap Cu+ state. (b) For the Cu-deficient CuInS QDs, there are three main processes. Process ①: a hole existing in the ground state forms Cu2+ defect, and it can directly recombine with the CB electron. Process ②: the recombination process was slow with the lifetime lasting hundreds of nanoseconds. To dominate the PL emission, another Cu vacancy trap (noted as VCu) quickly captured the photogenerated hole from the VB state, and formed a charge-compensated pair with the Cu2+ defect. Process ③: the trapped hole at VCu center radiatively recombined with the electron and finished the whole recombination process. (c) For the Cu-deficient core/shell QDs, the diffusion of Zn2+ ions occupied and decreased the VCu intragap states, and the thick ZnS shell eliminated the electron trap bands associated with the CB. The recombination of hot electron at CB edge and hole located at the intragap state (Cu+) dominated the PL decay process.
S4. Temporal evolution of PL emission spectra of CuInS QDs synthesized with different molar stoichiometric ratios of Cu : In precursors(a-d) stand for 1 : 1, 1 : 2, 1 : 4, and 1 : 6. DDT was chosen as the sulfur source. The aliquots of QDs samples for the PL intensity test were fixed. PL spectra were recorded with excitation at 450 nm
S5. Temporal evolution of PL spectra of CuInS QDs, CuInZnS QDs, and CuInZnS@ZnS QDs with different growth time(a-d) stand for the stoichiometric ratio of Cu : In at 1 : 1, 1 : 2, 1 : 4, and 1 : 6. PL spectra were recorded with excitation at 450 nm
S6. Temporal evolution of UV-Vis absorption spectra of CuInS QDs, CuInZnS QDs, CuInZnS@ZnS QDs synthesized with different molar stoichiometric ratios of Cu : In precursors(a-d) stand for the stoichiometric ratio of Cu : In at 1 : 1, 1 : 2, 1 : 4, and 1 : 6. The absorption shoulder/onset is more blue-shifted with less Cu/In ratio
S7. Temporal evolution of PL central emission peaks for CuInZnS@ZnS QDs with different shell growth timeThe stoichiometric ratios of Cu : In are 1 : 1, 1 : 2, 1 : 4, and 1 : 6
S8. Temporal evolution of PLQY for CuInZnS@ZnS QDs with different shell growth timeThe stoichiometric ratios of Cu : In are 1 : 1, 1 : 2, 1 : 4, and 1 : 6
S11. TEM image of CuInS QDs (the stoichiometric ratio of Cu : In at 1 : 2) with reaction time of 30 minThe red triangle frames indicate the shapes of the CuInS QDs
S12. TEM image of CuInZnS QDs (the stoichiometric ratio of Cu : In : Zn at 1 : 2 : 3) with Zn etching time of 90 minThe red triangle frames indicate the shapes of the CuInZnS QDs
S13. TEM images of CuInZnS@ZnS QDs (the stoichioetric ratio of Cu : In : Zn at 1 : 2 : 3) with ZnS shell growth time of 5 h The insert showing their representative high- esolution TEM images
S14. Size distribution histograms for CuInZnS/ZnS QDs (Cu : In : Zn at 1 : 2 : 3) with shell growth of 20 hTo build the histograms, over 100 particles were measured
Relevant parameters for CuInS QDs synthesized with different molar stoichiometric ratios of Cu : In. λem at the PL central emission peak from the QDs solution when excited at 450 nm. The amounts of DDT (10 mL) and CuI (0.1 mmol) were held fixed
Relevant parameters for CuInS QDs synthesized with different molar stoichiometric ratios of Cu : In. λem at the PL central emission peak from the QDs solution when excited at 450 nm. The amounts of DDT (10 mL) and CuI (0.1 mmol) were held fixed
Cu : In precursor
λem/nm
PLQY/%
PL decay/ns
1 : 1
710
3.3
264 (65)
1 : 2
633
8.8
270 (71)
1 : 4
625
18.9
293 (86)
1 : 6
618
21.0
299 (95)
Table 2.
Relevant parameters for CuInZnS alloyed QDs synthesized with differnt molar stoichiometric ratios of Cu : In. λem is the PL central emission peak from the QDs solution when excited at 450 nm. The amounts of DDT (10 mL) and CuI (0.1 mmol) were held fixed
Relevant parameters for CuInZnS alloyed QDs synthesized with differnt molar stoichiometric ratios of Cu : In. λem is the PL central emission peak from the QDs solution when excited at 450 nm. The amounts of DDT (10 mL) and CuI (0.1 mmol) were held fixed
Cu : In precursor
λem/nm
PLQY/%
PL decay/ns
1 : 1
675
14.7
277 (102)
1 : 2
596
16.8
284 (101)
1 : 4
590
24.8
284 (110)
1 : 6
581
36.3
282 (112)
Table 3.
PL lifetime of CuInZnS@ZnS QDs with the stoichiometric ratio of Cu : In at 1 : 2 after excited at 450 nm.
PL lifetime of CuInZnS@ZnS QDs with the stoichiometric ratio of Cu : In at 1 : 2 after excited at 450 nm.
Shell reaction time/h
PL decay/ns
3
588 (204)
5
647 (208)
8
714 (214)
10
724 (211)
12
729 (219)
15
751 (222)
20
755 (231)
Table 4.
Relevant parameters for CuInZnS@ZnS QDs with the stoichiometric ratio of Cu : In at 1 : 4, synthesized with different ZnS shell growth time. λem is the PL central emission peak from the QDs solution when excited at 450 nm. The amounts of DDT (10 mL) and CuI (0.1 mmol) were held fixed.
Relevant parameters for CuInZnS@ZnS QDs with the stoichiometric ratio of Cu : In at 1 : 4, synthesized with different ZnS shell growth time. λem is the PL central emission peak from the QDs solution when excited at 450 nm. The amounts of DDT (10 mL) and CuI (0.1 mmol) were held fixed.
Shell reaction time/h
PL emission peak/nm
PLQY/%
PL decay/ns
5
546
57
509 (171)
10
536
50
530 (177)
15
531
53
558 (174)
20
530
58
549 (165)
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Zi CHEN, Aidi ZHANG, Ke GONG, Haihua LIU, Gang YU, Qingsong SHAN, Yong LIU, Haibo ZENG. High-brightness and Monodisperse Quaternary CuInZnS@ZnS Quantum Dots with Tunable and Long-lived Emission[J]. Journal of Inorganic Materials, 2025, 40(4): 433