Fig. 1. (a) Schematic diagram of the FP microcavities array directly integrated on an InGaAs detector. (b) Simulated spectra of 16 FP microcavities array directly integrated on the InGaAs FPA.

Fig. 2. Fabrication process of on-chip InGaAs multispectral detector. (a) The InGaAs FPA. (b) The bottom DBR and cavity layer are deposited on the InGaAs FPA. (c) The cavity layer is processed with UV lithography and ICP etching. (d) The top DBR is deposited on the processed cavity layer and forms 16 different FP microcavities.

Fig. 3. (a) Cross-section SEM image of a representative monolithic integrated FP cavity with structure of (LH)³2.37L(HL)³, where H is the Si layer, and L is the SiO₂ layer. (b) The picture of the fabricated 16-channel multispectral detector chip with ROIC of the size about 2 mm². (c) The 64 × 64 pixels InGaAs detector FPA. (d) The 16-channel FP microcavities array, which is monolithically integrated with the detector chip.

Fig. 4. (a) Schematic diagram of the InGaAs FPA response spectrum test system. (b) The measured response spectrum of the standard detector. (c) The measured response spectra of the 16-channel multispectral detector.