Fig. 1. Schematic drawing of layer structure for GaSb-based ICLs

Fig. 2. X-ray diffraction data for wafers M368 (top) and M370 (middle) and a corresponding simulation (bottom) of an ω-2θ scan around the (004) reflection for the GaSb substrate. The scans are offset for clarity

Fig. 3. Current-voltage-light characteristics for a 150-μm-wide device from M370 in cw operation. The inset is the cw lasing spectrum from a 100-μm-wide device at a various heat-sink temperature

Fig. 4. Lasing wavelength of broad-area ICLs. Inset: pulsed lasing spectra (M368 and M370) at 300 K

Fig. 5. Threshold current density vs temperature for devices from wafers M368 and M370. Symbols and colors are consistent with those in Fig.4. Two insets are pulsed lasing spectra for three devices near their thresholds