Researching | A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect

Journal of Semiconductors, Volume. 44, Issue 7, 072804(2023)

A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect

Xuanze Zhou^*, Guangwei Xu^*, and Shibing Long^**

Author Affiliations

School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

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References(20)

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[3] A Kuramata, K Koshi, S Watanabe et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Jpn J Appl Phys, 55, 1202A2(2016).

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[7] H Y Liu, J N Li, Y J Lv et al. Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure. Appl Phys Lett, 121, 202101(2022).

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[9] X Z Zhou, Y J Ma, G W Xu et al. Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing. Appl Phys Lett, 121, 223501(2022).

[10] C L Wang, H Zhou, J C Zhang et al. Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron, sp of 0.74/0.28 GW/cm2. Appl Phys Lett, 120, 112101(2022).

[11] X Zhou, Q Liu, W Hao et al. Normally-off β-Ga2O3 power heterojunction fieldeffect-transistor realized by p-NiO and recessed gate. IEEE 26th Int Symp Power Semiconductor Devices IC’s (ISPSD)(2022).

[12] S Kim, Y W Zhang, C Yuan et al. Thermal management of β-Ga2O3 current aperture vertical electron transistors. IEEE Trans Compon, Packag Manufact Technol, 11, 1171(2021).

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Xuanze Zhou, Guangwei Xu, Shibing Long. A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect[J]. Journal of Semiconductors, 2023, 44(7): 072804

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Paper Information

Category: Articles

Received: Dec. 31, 2022

Accepted: --

Published Online: Aug. 7, 2023

The Author Email: Xuanze Zhou (xugw@ustc.edu.cn), Guangwei Xu (xugw@ustc.edu.cn), Shibing Long (shibinglong@ustc.edu.cn)

DOI:10.1088/1674-4926/44/7/072804

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