Journal of Semiconductors, Volume. 44, Issue 7, 072804(2023)

A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect

Xuanze Zhou*, Guangwei Xu*, and Shibing Long**
Author Affiliations
  • School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
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    Figures & Tables(5)
    (Color online) Cross-sectional schematic of the β-Ga2O3 MOSFET and its process flow.
    (Color online) DC (a) transfer and (b) output characteristics of small-area MOSFET. (c) Three terminal leakage current under the off-state.
    (Color online) (a) Optical microscope image and (b) layout of a multi-finger β-Ga2O3 MOSFET. (c) Transfer and (d) output characteristics of multi-finger MOSFET.
    (Color online) Temperature distribution images with biased time of (a) 0 s, (b) 10 s, (c) 20 s and (d) 50 s. The drain bias was set as 2 V. (e) Time dependence of the maximum temperature in the β-Ga2O3 channel with different drain voltages.
    (Color online) Thermal equilibrium state: (a) temperature distribution image with a drain voltage of 8 V and (b) maximum temperature in the β-Ga2O3 channel versus applied drain voltage.
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    Xuanze Zhou, Guangwei Xu, Shibing Long. A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect[J]. Journal of Semiconductors, 2023, 44(7): 072804

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    Paper Information

    Category: Articles

    Received: Dec. 31, 2022

    Accepted: --

    Published Online: Aug. 7, 2023

    The Author Email: Xuanze Zhou (xugw@ustc.edu.cn), Guangwei Xu (xugw@ustc.edu.cn), Shibing Long (shibinglong@ustc.edu.cn)

    DOI:10.1088/1674-4926/44/7/072804

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