Journal of Semiconductors, Volume. 44, Issue 7, 072804(2023)
A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect
Fig. 1. (Color online) Cross-sectional schematic of the β-Ga2O3 MOSFET and its process flow.
Fig. 2. (Color online) DC (a) transfer and (b) output characteristics of small-area MOSFET. (c) Three terminal leakage current under the off-state.
Fig. 3. (Color online) (a) Optical microscope image and (b) layout of a multi-finger β-Ga2O3 MOSFET. (c) Transfer and (d) output characteristics of multi-finger MOSFET.
Fig. 4. (Color online) Temperature distribution images with biased time of (a) 0 s, (b) 10 s, (c) 20 s and (d) 50 s. The drain bias was set as 2 V. (e) Time dependence of the maximum temperature in the β-Ga2O3 channel with different drain voltages.
Fig. 5. (Color online) Thermal equilibrium state: (a) temperature distribution image with a drain voltage of 8 V and (b) maximum temperature in the β-Ga2O3 channel versus applied drain voltage.
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Xuanze Zhou, Guangwei Xu, Shibing Long. A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect[J]. Journal of Semiconductors, 2023, 44(7): 072804
Category: Articles
Received: Dec. 31, 2022
Accepted: --
Published Online: Aug. 7, 2023
The Author Email: Xuanze Zhou (xugw@ustc.edu.cn), Guangwei Xu (xugw@ustc.edu.cn), Shibing Long (shibinglong@ustc.edu.cn)