Chinese Journal of Lasers, Volume. 49, Issue 24, 2401003(2022)

SiC Visible Light Blindness UV Avalanche Photodiodes

Chengdong Yang, Linlin Su*, Kaipeng Xia, and Wenye Ma
Author Affiliations
  • School of Electronic Information Engineering, Wuxi University, Wuxi 214105, Jiangsu, China
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    Figures & Tables(8)
    Profile structure of SiC APD
    Current-voltage and gain-voltage curves of SiC APD
    Quantum efficiency curves of SiC APD under different voltages
    Dark current curves of SiC APD. (a) Dark current curves of SiC APDs with different diameters; (b) dark current as a function of radius at reverse voltage of 170 V
    Dark current curves of 500 μm SiC APD. (a) Dark current curves at different temperatures; (b) dark current at reverse voltage of 200 V
    Images of defect. (a) Light microscope image; (b) scanning electron microscope image
    Comparison of dark currents of different SiC APDs at 95%Ub
    Dark count rates and single photon detection efficiencies of SiC APDs with different sizes. (a) Dark count rate versus overbias; (b) dark count rate versus single photon detection efficiency
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    Chengdong Yang, Linlin Su, Kaipeng Xia, Wenye Ma. SiC Visible Light Blindness UV Avalanche Photodiodes[J]. Chinese Journal of Lasers, 2022, 49(24): 2401003

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    Paper Information

    Category: laser devices and laser physics

    Received: Aug. 1, 2022

    Accepted: Sep. 22, 2022

    Published Online: Nov. 21, 2022

    The Author Email: Su Linlin (sulinlin@cwxu.edu.cn)

    DOI:10.3788/CJL202249.2401003

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