Matter and Radiation at Extremes, Volume. 10, Issue 3, 033802(2025)

High-pressure research on optoelectronic materials: Insights from in situ characterization methods

Songhao Guo、*, Yiqiang Zhan1, and Xujie Lü2
Author Affiliations
  • 1Center of Micro–Nano Systems, School of Information Science and Technology, Fudan University, Shanghai 200433, China
  • 2Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
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    References(66)

    [30] A. C.Larson, R. B.Von Dreele. GSAS: General Structure Analysis System Report LAUR(1986).

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    Songhao Guo, Yiqiang Zhan, Xujie Lü. High-pressure research on optoelectronic materials: Insights from in situ characterization methods[J]. Matter and Radiation at Extremes, 2025, 10(3): 033802

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    Paper Information

    Received: Jan. 16, 2025

    Accepted: Apr. 11, 2025

    Published Online: Jul. 16, 2025

    The Author Email: Songhao Guo (sh_guo@fudan.edu.cn)

    DOI:10.1063/5.0258375

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