Matter and Radiation at Extremes, Volume. 10, Issue 3, 033802(2025)
High-pressure research on optoelectronic materials: Insights from in situ characterization methods
Fig. 1. Integration of structural, optical, and electronic characterization methods for optoelectronic materials with DAC.
Fig. 2. (a) Schematic illustration of
Fig. 3. (a) Ambient crystal structure of Cs2PbI2Cl2. (b) Synchrotron XRD patterns of Cs2PbI2Cl2 at different pressures. (c) XRD refinements of XRD pattern for Cs2PbI2Cl2. (d) Unit-cell volume of Cs2PbI2Cl2 vs pressure. (e) Compressibility of Cs2PbI2Cl2 along different axes. (f) Pressure dependence of Cl–Pb–Cl bond angle and Pb–Cl bond length. Reproduced with permission from Lü
Fig. 4. (a) Schematic illustration of
Fig. 5. (a) Schematic illustration of
Fig. 6. (a) Time-resolved PL decay curves of Cs2Na0.4Ag0.6InCl6 under varying pressures. (b) Initial PL intensity vs carrier density of (BA)2(GA)Pb2I7 at different pressures. (c) Time-dependent PL intensity images of MAPbI3 at varying pressures. (b) The carrier transport kinetics of MAPbI3 at different pressures. (a) Reproduced with permission from Ma
Fig. 7. (a) TA spectra of FAPbBr3. (b) TA spectra of FAPbBr3 at various delay times. (c) Pressure-dependent evolution of hot carrier relaxation lifetimes (
Fig. 8. (a) SHG intensity of MHyPbBr3 vs pressure. (b) SHG intensity of MHyPbBr3 vs temperature under different pressures. (c) Pressure-dependent SHG intensity of NH4Cl during compression and decompression. (d) SHG measurements of NH4Cl at 2.0 GPa with varying fundamental wavelengths. (a) and (b) Reproduced with permission from Mao
Fig. 9. (a) Raman spectra of NbOI2. (b) Raman peak positions for NbOI2 as a function of pressure. (c) Schematic illustration of the vibrational modes for NbOI2. Reproduced with permission from Fu
Fig. 10. (a) and (b) Calculated and (c) experimental Raman spectra for BA molecules in a 2D halide perovskite.
Fig. 11. (a) Schematic illustration of
Fig. 12. (a) Temperature-dependent resistance of MoSe2 at different pressures. (b) Temperature–pressure–resistivity contour map. (c) Resistance of MoSe2 as a function of pressure.
Fig. 13. (a) Photocurrents of Cs2PbI2Cl2 upon compression. (b) Photoconductivity of Cs2PbI2Cl2 as a function of pressure. (c) Schematic of pressure-enhanced exciton dissociation. (d) Light-intensity-dependent photocurrent of iodine at 1.6 GPa. (e) Photocurrent density
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Songhao Guo, Yiqiang Zhan, Xujie Lü. High-pressure research on optoelectronic materials: Insights from in situ characterization methods[J]. Matter and Radiation at Extremes, 2025, 10(3): 033802
Received: Jan. 16, 2025
Accepted: Apr. 11, 2025
Published Online: Jul. 16, 2025
The Author Email: Songhao Guo (sh_guo@fudan.edu.cn)