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Journal of Infrared and Millimeter Waves, Volume. 41, Issue 2, 511(2022)

A distributed small signal equivalent circuit modeling method for InP HEMT

Jun-Jun QI1, Hong-Liang LYU1、*, Lin CHENG1, Yu-Ming ZHANG1, Yi-Men ZHANG1, Feng-Guo ZHAO2, and Lan-Yan DUAN2
Author Affiliations
  • 1School of Microelectronics，Xidian University，Key Laboratory of Wide Band-Gap;Semiconductor Materials and Devices，Xi’an 710071，China
  • 2ZTE Corporation，Shenzhen 518057，China
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    [1] Kulatunga T, Belostotski L, Haslett J W. 400-to-800-MHz GaAs pHEMT-Based wideband LNA for radio-astronomy antenna-array feed[J]. IEEE Microwave and Wireless Components Letters, 28, 99-911(2018).

    [2] GAO Jian-Jun[M]. RF and microwave modeling and measurement techniques for field effect transistors(2010).

    [3] Dambrine G, Cappy A, Heliodore F. A new method for determining the FET small-signal equivalent circuit[J]. IEEE Transactions on microwave theory and techniques, 36, 1151-1159(1988).

    [4] Berroth M, Bosch R. High-frequency equivalent circuit of InP FETs for large-signal applications[J]. IEEE transactions on Microwave Theory and Techniques, 39, 224-229(1991).

    [5] Jarndal A, Kompa G. A new small signal model parameter extraction method applied to GaN devices[C], 1423-1426.

    [6] Fan C.Y, Gao J J. A semi-analytical small signal parameter extraction method for millimeter HEMT[J]. J. Infrared Millim. Waves, 33, 69-74(2014).

    [7] ZHANG Jin-Can, WANG Shao-Wei, LIU Min et al. An improved GaN P-HEMT small-signal equivalent circuit with its parameter extraction[J]. Microelectronics journal, 112, 105042(2021).

    [8] Nguyen T T L, Kim S D. A gate-width scalable method of parasitic parameter determination for distributed HEMT small-signal equivalent circuit[J]. IEEE Transactions on Microwave Theory and Techniques, 61, 3632-3638(2013).

    [9] Gao J, Li X, Wang H. A new method for determination of parasitic capacitances for HEMT[J]. Semiconductor science and technology, 20, 586(2005).

    [10] Jarndal A, Kompa G. A new small-signal modeling approach applied to GaN devices[J]. IEEE Transactions on Microwave Theory and Techniques, 53, 3440-3448(2005).

    [11] Hower P L, Bechtel N G. Current saturation and small-signal characteristics of InP field-effect transistors[J]. IEEE Transactions on Electron Devices, 20, 213-220(1973).

    [12] Berroth M, Bosch R. Broad-band determination of the FET small-signal equivalent circuit[J]. IEEE Transactions on Microwave Theory and techniques, 38, 891-895(1990).

    [13] Alt A R, Marti D, Bolognesi C R. Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies[J]. IEEE Microwave Magazine, 14, 83-101(2013).

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    Jun-Jun QI, Hong-Liang LYU, Lin CHENG, Yu-Ming ZHANG, Yi-Men ZHANG, Feng-Guo ZHAO, Lan-Yan DUAN. A distributed small signal equivalent circuit modeling method for InP HEMT[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 511

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    Paper Information

    Category: Research Articles

    Received: May. 24, 2021

    Accepted: --

    Published Online: Jul. 8, 2022

    The Author Email: Hong-Liang LYU (hllv@mail.xidian.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2022.02.019

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology