Fig. 1. Distributed small signal equivalent circuit model for InP HEMT

Fig. 2. Simplified Circuit for parasitic inductances extraction

Fig. 3. Parasitic inductances extraction form the intercept of Im（Z_ij）verse ω²

Fig. 4. Extrinsic capacitances extraction form the intercept of Im（Y_ij）verse ω

Fig. 5. Simplified Circuit for parasitic resistances extraction

Fig. 6. Parasitic resistances extraction from the intercepts of（a）Re（Z_ij）verse 1/（V_gs-V_th）and（b）Re（Z₁₁）verse 1/I_g

Fig. 7. C_in values versus frequency

Fig. 8. R_is values versus frequency

Fig. 9. T_au values versus frequency

Fig. 10. g_m， G_ds values versus frequency

Fig. 11. Simulated and measured results of InP HEMT biased at V_ds=4 V, V_gs=-0.75 V

Fig. 12. S-parameter modeling error of InP HEMT small signal model