[1] [1] National Research Council. Harnessing Light: Optical Science and Engineering for the 21st Century[M]. Shanghai: Shanghai Scientific and Technical Literature Press,2001.(in Chinese)

[2] [2] LIAO ZH X,YANG F,XIA W J. Optical film thickness monitoring methods and its progress[J]. Laser Journal,2004,25(4): 10-12.(in Chinese)

[3] [3] TANG J F. Modern Optical Film Technology[M]. Hangzhou: Zhejiang University Press,2006. (in Chinese)

[4] [4] TOMPKINS H G. Industrial applications of spectroscopic ellipsometry[J]. Thin Solid Films,2004,455-456: 772-778.

[5] [5] DRUDE P. Ueber die gesetze der reflexion und brechung des lichtes an der grenze absorbirender krystalle[J]. Annalen Der Physik,1887,268(12): 584-625.

[6] [6] DRUDE P. Bestimmung der optischen constanten der metalle[J]. Annalen Der Physik,2010,275(4): 481-554.

[7] [7] ASPNES D E. Expanding horizons: new developments in ellipsometry and polarimetry[J]. Thin Solid Films,2004,455-456: 3-13.

[8] [8] TRONSTAD L. The investigation of thin surface films on metals by means of reflected polarized light[J]. Transactions of the Faraday Society,1933,29(140): 502-514.

[9] [9] KENT C V,LAWSON J. A photoelectric method for the determination of the parameters of elliptically polarized light[J]. Journal of the Optical Society of America,1937,27(3): 117-119.

[10] [10] ROTHEN A. The ellipsometer, an apparatus to measure thicknesses of thin surface films[J]. Review of Scientific Instruments,1945,16(2): 26-30.

[11] [11] BUDDE W. Photoelectric analysis of polarized light[J]. Applied Optics,1962,1(3): 201-205.

[12] [12] HAUGE P S,DILL F H. Design and operation of ETA, an automated ellipsometer[J]. IBM Journal of Research & Development,1973,17(6): 472-489.

[13] [13] HAUGE P S,DILL F H. A rotating-compensator fourier ellipsometer[J]. Optics Communications,1975,14(4): 431-437.

[14] [14] ASPNES D E,STUDNA A A. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV[J]. Physical Review B,1983,27(2): 985-1009.

[15] [15] JOHS B D,HE P,GREEN S E,et al.. Multiple order dispersive optics system and method of use: US,5666201[P/OL].1997-09-09. http: //digitalcommons.unl.edu/electricalengineeringfacpub/32.

[16] [16] THOMPSON R C,BOTTIGER J R,FRY E S. Measurement of polarized light interactions via the Mueller matrix[J]. Applied Optics,1980,19(8): 1323-1332.

[17] [17] OSSIKOVSKI R,SHIRAI H,DRVILLON B. In situ investigation by IR ellipsometry of the growth and interfaces of amorphous silicon and related materials[J]. Thin Solid Films,1993,234(1-2): 363-366.

[18] [18] JELLISON G E,MODINE F A. Two-modulator generalized ellipsometry: experiment and calibration[J]. Applied Optics,1997,36(31): 8184-8189.

[19] [19] ASPNES D E. Spectroscopic ellipsometry—past, present, and future[J]. Thin Solid Films,2014,571(9): 334-344.

[20] [20] ASPNESD E,THEENTENJ B,HOTTIERF. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry[J]. Physical Review B,1979,20(8): 3292-3302.

[21] [21] AZZAM R M A.Photopolarimetric measurement of the Mueller matrix by Fourier analysis of a single detected signal[J]. Optics Letters,1978,2(6): 148-150.

[22] [22] AZZAM R M A,GIARDINA K A,LOPEZ A G. Conventional and generalized Mueller-matrix ellipsometry using the four-detector photopolarimeter[J]. Optical Engineering,1991,30(10): 1583.

[23] [23] XIAO G H. Study of measurement technology for multi-wavelength null ellipsometry[D]. Guangzhou: South China Normal University,2009.(in Chinese)

[24] [24] GAO L. Application of high-accuracy ellipsometry to measure magnetic disc[D]. Harbin: Harbin Institute of Technology,2007.(in Chinese)

[25] [25] LUO J SH,CHEN M Q,ZHU H X,et al.. Design of an automated laser ellipsometer and its applications[J]. Journal of Xi′an Jiaotong University,1987,21(3): 61-68.(in Chinese)

[26] [26] ZHU H X,LUO J SH. The design and application of 0.5~2.0 eV automatic infrared spectroscopic ellipsometer[J]. Journal of Xi′an Jiaotong University,1993,27(3): 69-74.(in Chinese)

[27] [27] CHEN L Y,FENG X W,SU Y,et al.. Design of a scanning ellipsometer by synchronous rotation of the polarizer and analyzer[J]. Applied Optics,1994,33(7): 1299-1305.

[28] [28] HUANG ZH M,JIN SH R,CHEN SH W,et al.. Development of infrared spectroscopic ellipsometer by synchronous rotation of the polarizer and analyzer[J]. Journal of Infrared and Millimeter Waves,1998,17(5): 321-326.(in Chinese)

[29] [29] MENG Y H,JIN G. Technique of image grabbing and processing in ellipsometric image system[J]. Opt. Precision Eng.,2000,8(4): 316-320.(in Chinese)

[30] [30] XIA G Q,ZHANG R J,CHEN Y L,et al.. New design of the variable angle infrared spectroscopic ellipsometer using double Fourier transforms[J]. Review of Scientific Instruments,2000,71(7): 2677-2683.

[31] [31] CHEN X G,ZHANG CH W,LIU SH Y,et al.. Accurate characterization of nanoimprinted resist patterns using Mueller matrix ellipsometry[J]. Optics Express,2014,22(12): 15165-15177.

[32] [32] CHEN X G,ZHANG CH W,LIU SH Y,et al.. Mueller matrix ellipsometric detection of profile asymmetry in nanoimprinted grating structures[J]. Journal of Applied Physics,2014,116(19): 194305.

[33] [33] LI W Q. Research on development and application of a high-precision broadband muller natrix ellipsometer[D]. Wuhan: Huazhong University of Science and Technology,2016.(in Chinese)

[34] [34] FUJIWARA H. Spectroscopic Ellipsometry: Principles and Applications[M]. West Sussex: England John Wiley & Sons,2007.

[35] [35] LOSURDO M,HINGERL K. Ellipsometry at the Nanoscale[M]. Berlin Heidelberg: Springer-Verlag,2013.

[36] [36] HINRICHS K,EICHHORN K J. Ellipsometry of Functional Organic Surfaces and Films[M]. Berlin Heidelberg: Springer-Verlag,2014: 52.

[37] [37] YANG K,WANG X CH,BU Y. Research progress of ellipsometry[J]. Laser & Optoelectronics Progress,2007,44(3): 43-49.(in Chinese)

[38] [38] WU SH L. Ellipsometry of transparent optoelectronic materials[D]. Jinan: Shandong University,2012.(in Chinese)

[39] [39] KALIMANOVA I,ILIEVA N,GEORGIEVA M. Ellipsometry and thin films parameters measurement[C]. 28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress,2005: 472-475.

[40] [40] TOMPKINS H G,IRENE E A. Handbook of Ellipsometry[M]. Co-published by: Norwich,Heidelberg, Germany: Springer-Verlag GmbH & Co. KG,2005.

[41] [41] ASPNES D E. Precision bounds to ellipsometer systems[J]. Applied Optics,1975,14(5): 1131-1136.

[42] [42] ASPNES D E,HAUGE P S. Rotating-compensator/analyzer fixed-analyzer ellipsometer: analysis and comparison to other automatic ellipsometers[J]. Journal of the Optical Society of America,1976,66(9): 949-954.

[43] [43] CHEN L Y,LYNCH D W. Scanning ellipsometer by rotating polarizer and analyzer[J]. Applied Optics,1987,26(24): 5221-5228.

[44] [44] EL-AGEZ T M,ELTAYYAN A A E,TAYA S A. Rotating polarizer-analyzer scanning ellipsometer[J]. Thin Solid Films,2010,518(19): 5610-5614.

[45] [45] MAO P H,ZHENG Y X,CHEN Y R,et al.. Study of the new ellipsometric measurement method using integrated analyzer in parallel mode[J]. Optics Express,2009,17(10): 8641-8650.

[46] [46] CHEN L Y,FENG X W,SU Y,et al.. Improved rotating analyzer-polarizer type of scanning ellipsometer[J]. Thin Solid Film,1993,234(1-2): 385-389

[47] [47] HAUGE P S. Mueller matrix ellipsometry with imperfect compensators[J]. Journal of the Optical Society of America,1978,68(11): 1519-1528.

[48] [48] GEHRELS T. Planets, Stars and Nebulae Studied with Photopolarimetry[M]. Tucson, Arizon: University of Arizona Press,1974.

[49] [49] CHEN Y L,ZHANG R J,XIA G Q,et al.. Design of an infrared spectroscopic ellipsometer using double-fourier-transform method[J]. Acta Optica Sinica,2001,21(6): 729-733.(in Chinese)

[50] [50] FENG SH ZH. Spectroscopic ellipsoscopic study of size-controlled silicon nano-crystals and silicon nano-crystals: SiO2 composite thin film[D]. Shanghai: Fudan University,2007.(in Chinese)

[51] [51] JASPERSON S N,SCHNATTERLY S E. An improved method for high reflectivity ellipsometry based on a new polarization modulation technique[J]. Review of Scientific Instruments,1969,40(6): 761-767.

[52] [52] ADACHI S. Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information[M]. Boston,MA: Springer,1999.

[53] [53] LEE J,COLLINS R W,HEYD A R,et al.. Spectroellipsometry for characterization of Zn1-xCdxSe multilayered structures on GaAs[J]. Applied Physics Letters,1996,69(15): 2273-2275.

[54] [54] SERAPHIN B O. Optical Properties of Solids: New Developments[M]. American: Elsevier,1976.

[55] [55] ERMAN M,THEETEN J B,CHAMBON P,et al.. Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation[J]. Journal of Applied Physics,1984,56(10): 2664-2671.

[56] [56] ASPNES D E,STUDNA A A. High precision scanning ellipsometer[J]. Applied Optics,1975,14(1): 220-228.

[57] [57] BEAGLEHOLE D. Performance of a microscopic imaging ellipsometer[J]. Review of Scientific Instruments,1988,59(12): 2557-2559.

[58] [58] YOU H Y,JIA J H,CHEN J K,et al.. The study of a auto ellipsometer system by using a two-dimensional CCD array detector[J]. Journal of Infrared and Millimeter Waves,2003,22(1): 45-50.(in Chinese)

[59] [59] JIN G,JANSSON R,ARWIN H. Imaging ellipsometry revisited: developments for visualization of thin transparent layers on silicon substrates[J]. Review of Scientific Instruments,1996,67(8): 2930-2936.

[60] [60] SCHUBERT M,RHEINLNDER B,WOOLLAM J A,et al.. Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2[J]. Journal of the Optical Society of America A,1996,13(4): 875-883.

[61] [61] CHEN CH,AN I,FERREIRA G M,et al.. Multichannel Mueller matrix ellipsometer based on the dual rotating compensator principle[J]. Thin Solid Films,2004,455-456(1): 14-23.

[62] [62] JELLISON G E,MODINE F A. Two-modulator generalized ellipsometry: theory[J]. Applied Optics,1997,36(31): 8190-8198.

[63] [63] JELLISON G E,HUNN J D,ROULEAU C M. Normal-incidence generalized ellipsometry using the two-modulator generalized ellipsometry microscope[J]. Applied Optics,2006,45(22): 5479-5488.

[64] [64] JELLISON JR G E,HOLCOMB D E,HUNN J D,et al.. Generalized ellipsometry in unusual configurations[J]. Applied Surface Science,2006,253(1): 47-51.

[65] [65] ZHANG D X. Optical properties of several kinds of information films studied by spectroscopic ellipsometry[D]. Shanghai: Fudan University,2014.(in Chinese)

[66] [66] KRAVETS V G,GRIGORENKO A N,NAIR R R,et al.. Spectroscopic ellipsometry of graphene and an exciton-shifted van Hove peak in absorption[J]. Physical Review B,2010,81(15): 155413.

[67] [67] SCHULZ B,CHAN D,BCKSTRM J,et al.. Spectroscopic ellipsometry on biological materials-investigation of hydration dynamics and structural properties[J]. Thin Solid Films,2004,455-456(1): 731-734.

[68] [68] WOOLLAM J A. Ellipsometry solutions: Ellipsometry data analysis[EB/OL]. https: //www.jawoollam.com/resources/ellipsometry-tutorial/ellipsometry-data-analysis.

[69] [69] HILFIKER J N,SINGH N,TIWALD T,et al.. Survey of methods to characterize thin absorbing films with spectroscopic ellipsometry[J]. Thin Solid Films,2008,516(22): 7979-7989.

[70] [70] BASU S R,MARTIN L W,CHU Y H,et al.. Photoconductivity in BiFeO3 thin films[J]. Applied Physics Letters,2008,92(9): 091905.

[71] [71] PRICE J,BERSUKER G,LYSAGHT P S. Identification of electrically active defects in thin dielectric films by spectroscopic ellipsometry[J]. Journal of Applied Physics,2012,111(4): 043507-1-043507-6.

[72] [72] XU J P,ZHANG R J,ZHANG Y,et al. The thickness-dependent band gap and defect features of ultrathin ZrO2 films studied by spectroscopic ellipsometry[J]. Physical Chemistry Chemical Physics PCCP,2016,18(4): 3316-3321.

[73] [73] LI D H,ZHENG H,WANG Z Y,et al.. Dielectric functions and critical points of crystalline WS2 ultrathin films with tunable thickness[J]. Physical Chemistry Chemical Physics,2017,19(19): 12022-12031.

[74] [74] DRUDE P. Zur elektronentheorie der metalle;II.Teil. Galvanomagnetische und thermomagnetische effecte[J]. Annalen Der Physik,1900,308(11): 369-402.

[75] [75] LORENTZ H A. The Theory of Electrons and Its Applications to the Phenomena of Light and Radiant Heat[M]. New York: G.E. Stechert & Co. 1909.

[76] [76] JELLISON JR G E,MODINE F A. Parameterization of the optical functions of amorphous materials in the interband region[J]. Applied Physics Letters,1996,69(3): 371-373.

[77] [77] PRICE J,HUNG P Y,RHOAD T,et al.. Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody-Lorentz parameterized model[J]. Applied Physics Letters,2004,85(10): 1701-1703.

[78] [78] ZHAO D D,CAI Q Y,ZHENG Y X,et al.. Optical constants of e-beam evaporated and annealed Nb2O5 thin films with varying thickness[J]. Journal of Physics D: Applied Physics,2016,49(26): 265304.

[79] [79] ESRO M,VOURLIAS G,SOMERTON C,et al.. High-mobility ZnO thin film transistors based on solution-processed hafnium oxide gate dielectrics[J]. Advanced Functional Materials,2015,25: 134-141.

[80] [80] JANSSON R,ZANGOOIE S,ARWIN H,et al.. Characterization of 3C-SiC by spectroscopic ellipsometry[J]. Physica Status Solidi B,2015,218(1): r1-r2.

[81] [81] ZHANG D X,ZHENG Y X,CAI Q Y,et al.. Thickness-dependence of optical constants for Ta2O5, ultrathin films[J]. Applied Physics A,2012,108(4): 975-979.

[82] [82] ZHANG D X,SHEN B,ZHENG Y X,et al.. Evolution of optical properties of thin film from solid to liquid studied by spectroscopic ellipsometry and ab initio calculation[J]. Applied Physics Letters,2014,104(12): 121907.

[83] [83] STEIRER K X,NDIONE P F,WIDJONARKO N E,et al.. Enhanced efficiency in plastic solar cells via energy matched solution processed NiOx interlayers[J]. Advanced Energy Materials,2011,1(5): 813-820.

[84] [84] GHOSH M,PRADIPKANTI L,RAI V,et al.. Confined water layers in graphene oxide probed with spectroscopic ellipsometry[J]. Applied Physics Letters,2015,106(24): 241902.

[85] [85] YANG L,ZHENG Y X,YANG S D,et al.. Ellipsometric study on temperature dependent optical properties of topological bismuth film[J]. Applied Surface Science,2017,421(Part B): 899-904.

[86] [86] WANG Z Y,ZHANG R J,LU H L,et al.. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition[J]. Nanoscale Research Letters,2015,10(1): 46.

[87] [87] LI T,ZHANG M L,WANG F,et al.. Fabrication of optical waveguide amplifiers based on bonding-type NaYF4∶Er nanoparticles-polymer[J]. Chinese Optics,2017,10(2): 219-225.(in Chinese)

[88] [88] JIANG J H,ZHU L P,ZHU L J,et al.. Surface characteristics of a self-polymerized dopamine coating deposited on hydrophobic polymer films[J]. Langmuir the Acs Journal of Surfaces & Colloids,2011,27(23): 14180-14187.

[89] [89] FOROUHI A R,BLOOMER I. Optical dispersion relations for amorphous semiconductors and amorphous dielectrics[J]. Physical Review B Condensed Matter,1986,34(10): 7018-7026.

[90] [90] FOROUHI A R,BLOOMER I. Optical properties of crystalline semiconductors and dielectrics[J]. Physical Review B,1988,38(3): 1865-1874.

[91] [91] ZHENG H,ZHANG R J,XU J P,et al.. Thickness-dependent optical constants and annealed phase transitions of ultrathin ZnO films[J]. Journal of Physical Chemistry C,2016,120(39): 22532-22538.

[92] [92] CHRYSICOPOULOU P,DAVAZOGLOU D,TRAPALIS C,et al.. Optical properties of very thin(＜100 nm) sol-gel TiO2 films[J]. Thin Solid Films,1998,323(1-2): 188-193.

[93] [93] HEITMANN J,MLLER F,YI L X,et al.. Excitons in Si nanocrystals: confinement and migration effects[J]. Physical Review B,2004,69(19): 195309.

[94] [94] ZACHARIAS M,HILLER D,HARTEL A,et al.. Defect engineering of Si nanocrystal interfaces[J]. Physica Status Solidi A,2012,209(12): 2449-2454.

[95] [95] SHI Y J,ZHANG R J,ZHENG H,et al.. Optical constants and band gap evolution with phase transition in sub-20-nm-thick TiO2 films prepared by ALD[J]. Nanoscale Research Letters,2017,12(1): 243.

[96] [96] LI D H,ZHAI C H,ZHOU W C,et al.. Effects of bilayer thickness on the morphological, optical, and electrical properties of Al2O3/ZnO nanolaminates[J]. Nanoscale Research Letters,2017,12(1): 563.

[97] [97] LOU Y Y,WANG L J,MA H L,et al.. Ellipsometric study of CVD diamond films prepared with various grain sizes[J]. Proceedings of SPIE,2008,6984: 698419.

[98] [98] LPER P,STUCKELBERGER M,NIESEN B,et al.. Complex refractive index spectra of CH3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry[J]. Journal of Physical Chemistry Letters,2015,6(1): 66-71.

[99] [99] XIE Z A,LIU SH F,QIN L X,et al.. Refractive index and extinction coefficient of CH3NH3PbI3 studied by spectroscopic ellipsometry[J]. Optical Materials Express,2015,5(1): 29-43.

[100] [100] TAUC J,GRIGOROVICI R,VANCU A. Optical properties and electronic structure of amorphous germanium[J]. Physica Status Solidi,1966,15(2): 627-637.

[101] [101] WANG Z Y,YUAN S J,LI D H,et al.. Influence of hydration water on CH3NH3PbI3 perovskite films prepared through one-step procedure[J]. Optics Express,2016,24(22): A1431-A1443.

[102] [102] SHIRAYAMA M,KADOWAKI H,MIYADERA T,et al.. Optical transitions in hybrid perovskite solar cells: ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3[J]. Physical Review Applied,2016,5(1): 014012.

[103] [103] IHLEFELD J F,PODRAZA N J,LIU Z K,et al.. Optical band gap of BiFeO3 grown by molecular-beam epitaxy[J]. Applied Physics Letters,2008,92(14): 142908.

[104] [104] CHAIBI F,JEMAI R,AGUAS H,et al.. The effects of argon and helium dilution in the growth of nc-Si: H thin films by plasma-enhanced chemical vapor deposition[J]. Journal of Materials Science,2018,53(5): 3672-3681.

[105] [105] ORDAL M A,LONG L L,BELL R J,et al.. Optical properties of the metals Al, Co, Cu, Au, Fe, Pb, Ni, Pd, Pt, Ag, Ti, and W in the infrared and far infrared[J]. Applied Optics,1983,22(7): 1099-1119.

[106] [106] HU E T,CAI Q Y,ZHANG R J,et al.. Effective method to study the thickness-dependent dielectric functions of nanometal thin film[J]. Optics Letters,2016,41(21): 4907-4910.

[107] [107] ETCHEGOIN P G,LERU E C,MEYER M. An analytic model for the optical properties of gold[J]. Journal of Chemical Physics,2006,125(16): 164705.

[108] [108] BRUGGEMAN D A G. Calculation of various physics constants in heterogenous substances I.dielectricity constants and conductivity of mixed bodies from isotropic substances[J]. Annalen der Physik,1935,27(7): 636-664..

[109] [109] THEETEN J B,ASPNES D E. The determination of interface layers by spectroscopic ellipsometry[J]. Thin Solid Films,1979,60(2): 183-192.

[110] [110] YANG SH D,YANG L,ZHENG Y X,et al.. Structural-dependent optical properties of self-organized Bi2Se3 nanostructures: from nanocrystals to nanoflakes[J]. ACS Applied Materials & Interfaces,2017,9(34): 29295-29301.

[111] [111] ZHANG R J,CHEN Y M,LU W J,et al.. Influence of nanocrystal size on dielectric functions of Si nanocrystals embedded in SiO2 matrix[J]. Applied Physics Letters,2009,95(16): 161109.

[112] [112] XU J P,ZHANG R J,CHEN Z H,et al.. Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate[J]. Nanoscale Research Letters,2014,9(1): 188.

[113] [113] TAKEUCHI K,ADACHI S. Optical properties of β-Sn films[J]. Journal of Applied Physics,2009,105(7): 073520.

[114] [114] LOSURDO M. Applications of ellipsometry in nanoscale science: needs,status,achievements and future challenges[J]. Thin Solid Films,2011,519(9): 2575-2583.

[115] [115] QIAO Z W,GAO B R,CHEN Q D,,et al.. Ultrafast spectroscopy technique and their complementary usages[J]. Chinese Optics,2014,7(4): 588-599.(in Chinese)

[116] [116] PAN X Y,GONG Q H. Progress and prospects of ultrafast photoacoustic spectroscopy[J]. Physics,2002,31(10): 647-650.(in Chinese)

[117] [117] CHE M,VDRINE J C. Characterization of Solid Materials and Heterogeneous Catalysts: From Structure to Surface Reactivity[M]. Weinheim,Germany: Wiley-VCH Verlag GmbH & Co. KGaA,2012.

[118] [118] NIU X L,QIAO S,ZHANG L M,,et al.. Application of photoluminescence for investigating the influence of wafer thickness on the performance of multicrystalline silicon solar cell[J]. Optoelectronic Technology,2016,36(1): 55-58.(in Chinese)

[119] [119] HOMAN S B,SANGWAN V K,BALLA I,et al.. Ultrafast exciton dissociation and long-lived charge separation in a photovoltaic pentacene-MoS2 van der waals heterojunction[J]. Nano Letters,2017,17(1): 164-169.

[120] [120] CEBALLOS F,BELLUS M Z,CHIU H Y,et al.. Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der waals heterostructure[J]. ACS Nano,2014,8(12): 12717-12724.

[121] [121] HE J Q,KUMAR N,BELLUS M Z,et al.. Electron transfer and coupling in graphene-tungsten disulfide van der waals heterostructures[J]. Nature Communications,2014,5(1): 5622.

[122] [122] SARICIFTCI N S. Primary Photoexcitations in Conjugated Polymers: Molecular Exciton Versus Semiconductor Band Model[M].Singapore: World Scientific Publishing Co. Pte. Ltd,1997.

[123] [123] MAO P H,ZHENG Y X,CAI Q Y,et al.. Approach to error analysis and reduction for rotating-polarizer-analyzer ellipsometer[J]. Journal of the Physical Society of Japan,2012,81(12): 124003.

[124] [124] DEFRANOUX C,EMERAUD T,BOURTAULT S,et al.. Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI[J]. Thin Solid Films,2004,455-456: 150-156.

[125] [125] COBET C,WILMERS K,WETHKAMP T,et al.. Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV[J]. Thin Soild Films,2000,364(1-2): 111-113..

[126] [126] WANG X,JIN CH SH,KUANG SH Q,et al.. Techniques of radiation contamination monitoring for extreme ultraviolet devices[J]. Chinese Optics,2014,7(1): 79-88.(in Chinese)

[127] [127] HLINKA J,OSTAPCHUK T,NUZHNYY D,et al.. Coexistence of the phonon and relaxation soft modes in the terahertz dielectric response of tetragonal BaTiO3[J]. Physical Review Letters,2008,101(16): 167402.

[128] [128] HE Y ZH,UNG B S Y,PARROTT E P J,et al.. Freeze-thaw hysteresis effects in terahertz imaging of biomedical tissues[J]. Biomedical Optics Express,2016,7(11): 4711-4717.

[129] [129] CHEON H,YANG H J,LEE S H,et al.. Terahertz molecular resonance of cancer DNA[J]. Scientific Reports,2016,6: 37103.

[130] [130] FAN SH T,UNG B S Y,PARROTT E P J,et al.. In vivo terahertz reflection imaging of human scars during and after the healing process[J]. Journal of Biophotonics,2016,10(9): 1143-1151.

[131] [131] BAIERL S,HOHENLEUTNER M,KAMPFRATH T,et al.. Nonlinear spin control by terahertz-driven anisotropy fields[J]. Nature Photonics,2016,10(11): 715-718.

[132] [132] MUKAI Y,HIRORI H,YAMAMOTO T,et al.. Antiferromagnetic resonance excitation by terahertz magnetic field resonantly enhanced with split ring resonator[J]. Applied Physics Letters,2014,105(2): 022410.

[133] [133] SOTOME M,KIDA N,HORIUCHI S,et al.. Visualization of ferroelectric domains in a hydrogen-bonded molecular crystal using emission of terahertz radiation[J]. Applied Physics Letters,2014,105(4): 041101.

[134] [134] HOFMANN T,HERZINGER C M,BOOSALIS A,et al.. Variable-wavelength frequency-domain terahertz ellipsometry[J]. Review of Scientific Instruments,2010,81(2): 023101.

[135] [135] CHEN X Q,PARROTT E P J,HUANG ZH,et al.. Robust and accurate terahertz time-domain spectroscopic ellipsometry[J]. Photonics Research,2018,6(8): 768-775.

[136] [136] KHNE P,ARMAKAVICIUS N,STANISHEV V,et al.. Advanced terahertz frequency-domain ellipsometry instrumentation for in situ and ex situ applications[J]. IEEE Transactions on Terahertz Science & Technology,2018,8(3): 257-270.

[137] [137] VAUPEL M,EING A GREULICH K O,et al.. Microarray Technology and Its Applications: Marker-free Detection on Microarrays[M]. Gemany: Springer,2004.

[138] [138] POKSINSKI M,ARWIN H. Protein monolayers monitored by internal reflection ellipsometry[J]. Thin Solid Films,2004,455-456: 716-721.

[139] [139] KARLSSON L M,SCHUBERT M,ASHKENOV N,,et al.. Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry[J]. Thin Solid Films,2004,455-456: 726-730.

[140] [140] GARCIA-CAUREL E,NGUYEN J,SCHWARTZ L,et al.. Application of FTIR ellipsometry to detect and classify microorganisms[J]. Thin Solid Films,2004,455-456: 722-725.

[141] [141] LIN C H,CHEN H L,CHAO W CH,et al.. Optical characterization of two-dimensional photonic crystals based on spectroscopic ellipsometry with rigorous coupled-wave analysis[J]. Microelectronic Engineering,2006,83(4-9): 1798-1804.

[142] [142] PPA Z,CSONTOS J,SMAUSZ T,et al.. Spectroscopic ellipsometric investigation of graphene and thin carbon films from the point of view of depolarization effects[J]. Applied Surface Science,2017,421(B): 714-721.

[143] [143] AL-HAZMI F S,BEALL G W,AL-GHAMDI A A,et al.. Raman and ellipsometry spectroscopic analysis of graphene films grown directly on Si substrate via CVD technique for estimating the graphene atomic planes number[J]. Journal of Molecular Structure,2016,1118: 275-278.

[144] [144] LIU H X,ZHANG W,GONG Y. Research progress on grating parameter measurement technology[J]. Chinese Optics,2011,4(2): 103-110.(in Chinese)

[145] [145] BANON J P,NESSE T,KILDEMO M,et al.. Critical dimension metrology of a plasmonic photonic crystal based on Muller matrix ellipsometry and the reduced Rayleigh equation[J]. Optics Letters,2017,42(13): 2631-2634.

[146] [146] CHEN X G,YUAN K,DU W CH,et al.. Large-scale nanostructure metrology using Muellermatrix imaging ellipsometry[J]. Acta Physica Sinica,2016,65(7): 070703.(in Chinese)

[147] [147] SONG P. Study of magneto-optical Ellipsometry[D]. Jinan: Shandong University,2011.(in Chinese)

[148] [148] WANG X. Characterization of magneto-optical properties of nano-scale magnetic thin film[D]. Jinan: Shandong University,2014.(in Chinese)