[1] [1] HARIMA H. Properties of GaN and related compounds studied by means of Raman scattering[J]. Journal of Physics: Condensed Matter, 2002, 14(38): R967-R993.

[5] [5] SUN D F, LIU L, WANG G D, et al. Research progress in liquid phase growth of GaN crystals[J]. Chemistry-A European Journal, 2024, 30(17): e202303710.

[6] [6] WANG B F, LIU L, TIAN G, et al. Studying the effect of temperature and pressure on GaN crystalsviathe Na-flux method[J]. CrystEngComm, 2024, 26(24): 3176-3184.

[8] [8] ZHANG L, DAI Y B, WU Y Z, et al. Epitaxial growth of a self-separated GaN crystal by using a novel high temperature annealing porous template[J]. CrystEngComm, 2014, 16(38): 9063-9068.

[9] [9] LIU L, ZHANG X, WANG S Z, et al. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates[J]. CrystEngComm, 2022, 24(10): 1840-1848.

[10] [10] YU H D, WANG G D, WANG S Z, et al. Application of multiphoton photoluminescence in characterization of GaN dislocations[J]. Journal of Materials Science: Materials in Electronics, 2024, 35(20): 1431.

[11] [11] WANG Z X, WANG S Z, LIU L, et al. Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE[J]. CrystEngComm, 2024, 26(38): 5415-5420.

[12] [12] YU H D, WANG G D, WANG S Z, et al. The influence of the interaction mechanism between impurities and point defects on the yellow luminescence band of GaN[J]. Vacuum, 2025, 234: 114127.