Preparation of 4-Inch High-Quality GaN Single Crystal Substrates

QI Zhanguo; WANG Shouzhi; LI Qiubo; WANG Zhongxin; SHAO Huihui; LIU Lei; WANG Guodong; SUN Defu; YU Huidong; JIANG Kaize; ZHANG Shuang; CHEN Xiufang; XU Xiangang; ZHANG Lei

doi:10.16553/j.cnki.issn1000-985x.2025.4001

Journal of Synthetic Crystals, Volume. 54, Issue 4, 717(2025)

Preparation of 4-Inch High-Quality GaN Single Crystal Substrates

QI Zhanguo¹, WANG Shouzhi^1,2、*, LI Qiubo¹, WANG Zhongxin¹, SHAO Huihui¹, LIU Lei¹, WANG Guodong¹, SUN Defu¹, YU Huidong¹, JIANG Kaize¹, ZHANG Shuang¹, CHEN Xiufang¹, XU Xiangang¹, and ZHANG Lei^1,2

Author Affiliations

¹State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

²Shandong Crystal GaN Semiconductor Co., Ltd., Jinan 250100, China

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QI Zhanguo, WANG Shouzhi, LI Qiubo, WANG Zhongxin, SHAO Huihui, LIU Lei, WANG Guodong, SUN Defu, YU Huidong, JIANG Kaize, ZHANG Shuang, CHEN Xiufang, XU Xiangang, ZHANG Lei. Preparation of 4-Inch High-Quality GaN Single Crystal Substrates[J]. Journal of Synthetic Crystals, 2025, 54(4): 717

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Paper Information

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Received: Apr. 2, 2025

Accepted: Jun. 5, 2025

Published Online: Jun. 5, 2025

The Author Email: WANG Shouzhi (wangsz@sdu.edu.cn)

DOI:10.16553/j.cnki.issn1000-985x.2025.4001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology