[1] [1] Holmes M J, Choi K, Kako S, Arita M, Arakawa Y. Roomtemperature triggered single photon emission from a III-nitride sitecontrolled nanowire quantum dot. Nano Letters, 2014, 14(2): 982– 986

[2] [2] Guo W, Zhang M, Banerjee A, Bhattacharya P. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. Nano Letters, 2010, 10(9): 3355–3359

[3] [3] Lu Y J, Kim J, Chen H Y,Wu C, Dabidian N, Sanders C E,Wang C Y, Lu MY, Li B H, Qiu X, ChangWH, Chen L J, Shvets G, Shih C K, Gwo S. Plasmonic nanolaser using epitaxially grown silver film. Science, 2012, 337(6093): 450–453

[4] [4] Calleja E, Sanchez-Garcia M A, Sanchez F J, Calle F, Naranjo F B, Munoz E, Jahn U, Ploog K. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy. Physical Review B: Condensed Matter and Materials Physics, 2000, 62(24): 16826–16834

[5] [5] Tourbot G, Bougerol C, Grenier A, Den Hertog M, Sam-Giao D, Cooper D, Gilet P, Gayral B, Daudin B. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PAMBE. Nanotechnology, 2011, 22(7): 075601

[6] [6] Nguyen H P, Zhang S, Cui K, Han X, Fathololoumi S, Couillard M, Botton G A, Mi Z. p-Type modulation doped InGaN/GaN dot-in-awire white-light-emitting diodes monolithically grown on Si(111). Nano Letters, 2011, 11(5): 1919–1924

[7] [7] Pan C, Dong L, Zhu G, Niu S, Yu R, Yang Q, Liu Y, Wang Z L. High-resolution electroluminescent imaging of pressure distribution using a piezoelectric nanowire LED array. Nature Photonics, 2013, 7 (9): 752–758

[8] [8] Nguyen H P, Djavid M, Woo S Y, Liu X, Connie A T, Sadaf S, Wang Q, Botton G A, Shih I, Mi Z. Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers. Scientific Reports, 2015, 5: 7744

[9] [9] Consonni V. Self-induced growth of GaN nanowires by molecular beam epitaxy: a critical review of the formation mechanisms. Physica Status Solidi (RRL) - Rapid Research Letters., 2013, 7(10): 699–712

[10] [10] Fernández-Garrido S, Grandal J, Calleja E, Sánchez-García M A, López-Romero D. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111). Journal of Applied Physics, 2009, 106(12): 126102

[11] [11] Lang N. Studies on the growth of III-nitride quantum dots by MBE and related properties. Dissertation for the Doctoral Degree. Beijing: Tsinghua University, 2014, 35–36